FZ1200R17HE4PHPSA1 Allicdata Electronics
Allicdata Part #:

FZ1200R17HE4PHPSA1-ND

Manufacturer Part#:

FZ1200R17HE4PHPSA1

Price: $ 467.85
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MODULE IGBT IHMB130-2
More Detail: IGBT Module Trench Field Stop Single Switch 1700V ...
DataSheet: FZ1200R17HE4PHPSA1 datasheetFZ1200R17HE4PHPSA1 Datasheet/PDF
Quantity: 1000
3 +: $ 425.31700
Stock 1000Can Ship Immediately
$ 467.85
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 1200A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 97nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FZ1200R17HE4PHPSA1 Application Field and Working Principle

FZ1200R17HE4PHPSA1 is an IGBT module manufactured by Fuji Electric. It has a Vce (collector-emitter voltage) of 1700 volts and can output a maximum current of 1200 A. Increasingly, this type of module is finding wide application in renewable energy conversion and control systems, electric vehicles, and other high-power electric drive applications.

In general, it operates in much the same manner as a regular transistor. The two switches (gate and emitter) control the current flowing from the collector to the emitter. When a positive voltage is applied to the gate, an electric field is formed across the base-emitter junction which causes current to flow from the collector to the emitter. This type of transistor combines the low trigger voltage and low power consumption of MOSFET transistors with the high-current carrying capacity of bipolar type.

The operational function of FZ12000R17HE4PHPSA1 can be further increased by applying various voltage and current control schemes, most notably PWM (Pulse Width Modulation) control. Through this type of control, the amount of power delivered to the load can be accurately tuned for optimal efficiency. Current and voltage feedback loops are also employed to ensure the steady-state performance of the module.

In addition, FZ12000R17HE4PHPSA1 can also be used in applications requiring high power activities and inductive loads such as DC motor drives, welding machines and smelting machines. As well as this, its switching characteristic enables it to be used in applications requiring high or low voltage commands, such as uninterruptible power supplies (UPS) or industrial automation.

Above all, the salient attribute of FZ12000R17HE4PHPSA1 is its ability to withstand high energy surges. It has a soft saturation characteristics which increases its capacity to withstand high energy levels, and its modular construction allows it to be easily integrated into power systems requiring high power outputs.

FZ12000R17HE4PHPSA1, being an IGBT module, has many advantages like low switching losses, high efficiency, and high frequency operation, which makes it the ideal choice for applications with high switching frequencies and tight control requirements, making it suitable for a wide range of applications in renewable energy conversion, electric vehicles, and other high-power electric drive applications.

The specific data is subject to PDF, and the above content is for reference

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