Allicdata Part #: | FZ1200R45KL3B5NOSA1-ND |
Manufacturer Part#: |
FZ1200R45KL3B5NOSA1 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT A-IHV190-4 |
More Detail: | IGBT Module Single 4500V 1200A 13500W Chassis Mou... |
DataSheet: | FZ1200R45KL3B5NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.26000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 4500V |
Current - Collector (Ic) (Max): | 1200A |
Power - Max: | 13500W |
Vce(on) (Max) @ Vge, Ic: | 2.85V @ 15V, 1200A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 280nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -50°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FZ1200R45KL3B5NOSA1 is an Intelligent Power Module (IPM) consisting of an Insulated-Gate Bipolar Transistor (IGBT) with diode and an integrated gate drive circuit. It is specifically designed for high performance switching applications. FZ1200R45KL3B5NOSA1 is typically used in frequency drives, power supplies, motor control and home appliance applications.
Application Field
FZ1200R45KL3B5NOSA1 is designed for high performance switching applications. Typical applications include:
- Frequency drives
- Power supplies
- Motor control
- Home appliance applications
- Renewable energy
- Utility systems
- Lighting control
- Industrial systems
Working Principle
FZ1200R45KL3B5NOSA1 consists of an Insulated-Gate Bipolar Transistor (IGBT) with diode and an integrated gate drive circuit. The IGBT part of the module is responsible for switching and/or controlling the flow of current in the application. The gate drive circuit allows for the control of IGBT switching by varying the voltage or current applied to the gate. The voltage or current applied to the gate determines the level of the current that is allowed to flow through the IGBT. By increasing the voltage applied to the gate, the IGBT can be switched from an OFF state to an ON state, allowing current to flow through the module.
The diode portion of the module provides an additional level of protection in applications where the current needs to be diverted in the opposite direction. When the IGBT is in an OFF state, the diode allows for current to bypass the IGBT and flow unencumbered, protecting the circuit components downstream. The integrated gate drive circuit allows the user to select the necessary operating parameters for their specific application. This includes the ability to select the polarity of the gate, the voltage and current ratings, and the type of protection required.
FZ1200R45KL3B5NOSA1 has a variety of features that make it suitable for a wide range of applications, including a wide operating temperature range, high speed switching, and fault protection. It is designed to be robust and reliable for use in demanding environments and applications. The module is RoHS compliant and offers excellent EMC performance.
The specific data is subject to PDF, and the above content is for reference
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