
Allicdata Part #: | GD5F1GQ4UEYIGR-ND |
Manufacturer Part#: |
GD5F1GQ4UEYIGR |
Price: | $ 1.76 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | GigaDevice Semiconductor (HK) Limited |
Short Description: | SPI NAND FLASH |
More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) SPI - Quad I... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 1.60083 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (128M x 8) |
Clock Frequency: | 120MHz |
Write Cycle Time - Word, Page: | 700µs |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | 8-WSON (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a form of storage used to store information in digital form. The term memory is most often associated with random access memory (RAM), which is used to store program data while the computer is operating. Memory chips can also be used to store data on a long-term basis, such as on a hard drive or a flash drive.
GD5F1GQ4UEYIGR is a type of non-volatile memory technology, which means that once data is stored in it, it remains stored even when power is removed from the system. It is also referred to as ferroelectric RAM, or F-RAM. F-RAM is based on the same technology used in conventional RAM, but with an added feature that allows it to retain data without the need for a continuous power supply.
The GD5F1GQ4UEYIGR application field includes a wide range of applications, from mobile devices and computing applications to automotive. F-RAM provides several advantages over other types of non-volatile memory, such as low power consumption, fast read/write speeds, and low latency. These features make F-RAM ideal for use in embedded systems and other places where power is limited. F-RAM has applications in the medical, automotive, industrial, aerospace, and telecommunications industries.
The working principle of GD5F1GQ4UEYIGR is based on capacitors that are charged through an electrical current. When the charge is removed, the capacitor still retains the electricity and can be used to store information. To write information onto the chip, signals are sent through a transistorwhich is used to control the capacitor’s voltage. To read the information, the voltage is read and converted into a binary code. F-RAM is considered to be a hybrid technology since it combines the best features of RAM and EEPROM (electrically erasable programmable read-only memory). F-RAM is also more durable than other types of memory, as it is not vulnerable to wear and tear caused by frequent writing and erasing.
In conclusion, GD5F1GQ4UEYIGR is a type of non-volatile memory technology that offers low power consumption, fast read/write speeds, and low latency. It is suitable for a wide range of applications, including mobile devices, computing applications, and automotive engineering. F-RAM is also considered to be a hybrid technology since it combines the best features of RAM and EEPROM, and is also more durable than other memory chips. F-RAM is used in several industries, including medical, automotive, industrial, aerospace, and telecommunications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
GD5F1GQ4UEYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UFYIGY | GigaDevice S... | 1.69 $ | 960 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UEYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UFYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4RF9IGY | GigaDevice S... | 1.69 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UEYIGY | GigaDevice S... | 1.69 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UFYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UEYIGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4RF9IGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4RF9IGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4RF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
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