GD5F2GQ4RF9IGR Allicdata Electronics
Allicdata Part #:

1970-1082-2-ND

Manufacturer Part#:

GD5F2GQ4RF9IGR

Price: $ 2.83
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: SPI NAND FLASH
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) SPI - Quad I...
DataSheet: GD5F2GQ4RF9IGR datasheetGD5F2GQ4RF9IGR Datasheet/PDF
Quantity: 1000
3000 +: $ 2.56922
Stock 1000Can Ship Immediately
$ 2.83
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Clock Frequency: 120MHz
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WLGA Exposed Pad
Supplier Device Package: 8-LGA (6x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GD5F2GQ4RF9IGR are included in the Memory category, and it consists of dynamic random access memory (DRAM) and static random access memory (SRAM). DRAMs allow data to be written and read multiple times, while SRAMs are typically used as cache memory in modern computing systems due to their faster access times. Both DRAM and SRAM require regular refreshing in order to retain the data they store.

GD5F2GQ4RF9IGRs are mainly used in applications where high speed data access and storage are required. For example, in modern computers, DRAM is used to store the operating system, application programs, and other data that is frequently accessed by the processor. SRAM is commonly used as a type of cache memory in these systems, due to the fact that it can access data faster than DRAM. In addition, GD5F2GQ4RF9IGRs are widely used in mobile phones, gaming consoles, digital cameras, and other devices.

The working principle of GD5F2GQ4RF9IGRs can be broken down into two stages: write and read. In the write stage, data is written to the memory cell using a process called “data strobing”. During this process, data is transferred from the processor to the chip that contains the Memory array. Once the data is transferred, a special row and column address is used to determine which cell the data is to be written to. In the read stage, the process is reversed, with the stored data being retrieved from the specified memory cell.

In addition to providing data storage for computer systems, GD5F2GQ4RF9IGRs also have a range of other applications, such as embedded control systems. They are also often used in industrial systems where a high degree of reliability is required, as well as in embedded applications, such as traffic lights and medical devices.

Overall, GD5F2GQ4RF9IGRs play an important role in modern computing, offering a cost effective, reliable and high-speed storage solution. They consist of DRAM and SRAM, with each type having its own advantages and disadvantages. GD5F2GQ4RF9IGR’s write and read operations are based on “data strobing”, and they are widely used across a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "GD5F" Included word is 20
Part Number Manufacturer Price Quantity Description
GD5F1GQ4RF9IGY GigaDevice S... 1.69 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4UEYIGY GigaDevice S... 1.69 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4UFYIGY GigaDevice S... 1.69 $ 960 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4UEYIGR GigaDevice S... 1.76 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4RF9IGY GigaDevice S... 2.73 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4UEYIGY GigaDevice S... 2.73 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4UFYIGY GigaDevice S... 2.73 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4UEYIGR GigaDevice S... 2.83 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4RBYIGY GigaDevice S... 4.09 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4RCYIGY GigaDevice S... 4.09 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4UBYIGY GigaDevice S... 4.09 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4UCYIGY GigaDevice S... 4.09 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4RBYIGR GigaDevice S... 4.12 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4RCYIGR GigaDevice S... 4.12 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4UBYIGR GigaDevice S... 4.12 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4UCYIGR GigaDevice S... 4.12 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4RF9IGR GigaDevice S... 1.76 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4UFYIGR GigaDevice S... 1.76 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4RF9IGR GigaDevice S... 2.83 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4UF9IGR GigaDevice S... 2.83 $ 1000 SPI NAND FLASHFLASH - NAN...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics