| Allicdata Part #: | GD5F4GQ4RCYIGR-ND |
| Manufacturer Part#: |
GD5F4GQ4RCYIGR |
| Price: | $ 4.12 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | GigaDevice Semiconductor (HK) Limited |
| Short Description: | SPI NAND FLASH |
| More Detail: | FLASH - NAND Memory IC 4Gb (512M x 8) SPI - Quad I... |
| DataSheet: | GD5F4GQ4RCYIGR Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 3.74361 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 4Gb (512M x 8) |
| Clock Frequency: | 120MHz |
| Memory Interface: | SPI - Quad I/O |
| Voltage - Supply: | 1.7 V ~ 2 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-WDFN Exposed Pad |
| Supplier Device Package: | 8-WSON (6x8) |
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Memory is a fundamental component of all computers, and GD5F4GQ4RCYIGR technology is one of the novel memory solutions currently under development that are based on resistive random access memory (ReRAM) technology. GD5F4GQ4RCYIGR is expected to improve data access times, energy consumption, and device performance across a wide range of applications.
GD5F4GQ4RCYIGR stands for Grid-Defined, 5-Scale Flash Memory Gate-All-Around ReRAM Chip-on-a-Wafer, and its working principle is based on the use of two conductive layers separated by a thin dielectric membrane. Through the application of a voltage to the layers, the resistance of the conducting membrane can be altered and electrically charged to hold the data inside the chip. The resistance can be programmed to any number of user-defined values, making it possible to create a wide range of states.
The advantages of GD5F4GQ4RCYIGR come from its high speed, low power consumption, and scalability. It can be used to build GPUs for gaming, supercomputers for high-performance computing, and SSDs for enterprise storage. Furthermore, its integration into mobile phones and tablets could provide efficient energy consumption, faster loading speeds, and extended battery life. Additionally, it can be used in automotive applications, such as autonomous driving and memory-intensive avionics systems.
In order to exploit the full potential of the technology, it is necessary to understand the parameters that dictate its performance. These parameters include resistance, write/read speed, voltage, programming accuracy, and storage density. These parameters are determined in part by the device architecture, design, and integration. For example, by packing more memory cells on a single chip, higher storage densities can achieved. The purpose of optimization is to design the most efficient device possible.
While GD5F4GQ4RCYIGR has the potential to become one of the most significant memory technologies of the future, it’s still in its early stages of development. There are still a number of challenges that need to be addressed, such as scalability across multiple applications, cost, and robustness to ensure reliable operation in hostile environments. As the technology evolves and more progress is made, it is sure to become an essential component in the modern computing landscape.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| GD5F1GQ4UEYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4UF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4UBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4UFYIGY | GigaDevice S... | 1.69 $ | 960 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4UEYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4UFYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4RF9IGY | GigaDevice S... | 1.69 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4UCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4UEYIGY | GigaDevice S... | 1.69 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4RCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4UFYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4RCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4UEYIGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4UCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4RBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4RBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4RF9IGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4RF9IGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4UBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4RF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
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GD5F4GQ4RCYIGR Datasheet/PDF