GD5F4GQ4RCYIGR Allicdata Electronics
Allicdata Part #:

GD5F4GQ4RCYIGR-ND

Manufacturer Part#:

GD5F4GQ4RCYIGR

Price: $ 4.12
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: SPI NAND FLASH
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) SPI - Quad I...
DataSheet: GD5F4GQ4RCYIGR datasheetGD5F4GQ4RCYIGR Datasheet/PDF
Quantity: 1000
3000 +: $ 3.74361
Stock 1000Can Ship Immediately
$ 4.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Clock Frequency: 120MHz
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a fundamental component of all computers, and GD5F4GQ4RCYIGR technology is one of the novel memory solutions currently under development that are based on resistive random access memory (ReRAM) technology. GD5F4GQ4RCYIGR is expected to improve data access times, energy consumption, and device performance across a wide range of applications.

GD5F4GQ4RCYIGR stands for Grid-Defined, 5-Scale Flash Memory Gate-All-Around ReRAM Chip-on-a-Wafer, and its working principle is based on the use of two conductive layers separated by a thin dielectric membrane. Through the application of a voltage to the layers, the resistance of the conducting membrane can be altered and electrically charged to hold the data inside the chip. The resistance can be programmed to any number of user-defined values, making it possible to create a wide range of states.

The advantages of GD5F4GQ4RCYIGR come from its high speed, low power consumption, and scalability. It can be used to build GPUs for gaming, supercomputers for high-performance computing, and SSDs for enterprise storage. Furthermore, its integration into mobile phones and tablets could provide efficient energy consumption, faster loading speeds, and extended battery life. Additionally, it can be used in automotive applications, such as autonomous driving and memory-intensive avionics systems.

In order to exploit the full potential of the technology, it is necessary to understand the parameters that dictate its performance. These parameters include resistance, write/read speed, voltage, programming accuracy, and storage density. These parameters are determined in part by the device architecture, design, and integration. For example, by packing more memory cells on a single chip, higher storage densities can achieved. The purpose of optimization is to design the most efficient device possible.

While GD5F4GQ4RCYIGR has the potential to become one of the most significant memory technologies of the future, it’s still in its early stages of development. There are still a number of challenges that need to be addressed, such as scalability across multiple applications, cost, and robustness to ensure reliable operation in hostile environments. As the technology evolves and more progress is made, it is sure to become an essential component in the modern computing landscape.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "GD5F" Included word is 20
Part Number Manufacturer Price Quantity Description
GD5F1GQ4UEYIGR GigaDevice S... 1.76 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4UF9IGR GigaDevice S... 2.83 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4UBYIGY GigaDevice S... 4.09 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4UFYIGY GigaDevice S... 1.69 $ 960 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4UEYIGY GigaDevice S... 2.73 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4UFYIGY GigaDevice S... 2.73 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4RF9IGY GigaDevice S... 1.69 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4UCYIGR GigaDevice S... 4.12 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4UEYIGY GigaDevice S... 1.69 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4RCYIGR GigaDevice S... 4.12 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4UFYIGR GigaDevice S... 1.76 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4RCYIGY GigaDevice S... 4.09 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4UEYIGR GigaDevice S... 2.83 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4UCYIGY GigaDevice S... 4.09 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4RBYIGY GigaDevice S... 4.09 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4RBYIGR GigaDevice S... 4.12 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F1GQ4RF9IGR GigaDevice S... 1.76 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4RF9IGY GigaDevice S... 2.73 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F4GQ4UBYIGR GigaDevice S... 4.12 $ 1000 SPI NAND FLASHFLASH - NAN...
GD5F2GQ4RF9IGR GigaDevice S... 2.83 $ 1000 SPI NAND FLASHFLASH - NAN...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics