Allicdata Part #: | GD5F1GQ4UEYIGY-ND |
Manufacturer Part#: |
GD5F1GQ4UEYIGY |
Price: | $ 1.69 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | GigaDevice Semiconductor (HK) Limited |
Short Description: | SPI NAND FLASH |
More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) SPI - Quad I... |
DataSheet: | GD5F1GQ4UEYIGY Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 1.53798 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (128M x 8) |
Clock Frequency: | 120MHz |
Write Cycle Time - Word, Page: | 700µs |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | 8-WSON (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is essential to computing, whether it be to store program instructions or data to be processed. Classification within the memory hierarchy typically places types of memory into three distinct categories, namely Primary Memory, Secondary Memory, and Virtual Memory. Within each of these categories of memory, different types of memory technologies and devices exist. One such memory device is the 5F1GQ4UEYIGY, which is a type of Primary Memory device.
The 5F1GQ4UEYIGY utilises static random access memory (SRAM) technology. SRAM technology uses a bi-directional memory cell consisting of four transistors. This technology is characterised by fast access times and high speed but is volatile, meaning that it requires a constant supply of power to retain its contents. As such, 5F1GQ4UEYIGY memory is not suitable for long-term storage of data and must be refreshed every few milliseconds for efficient usage.
The 5F1GQ4UEYIGY is primarily used in applications where minimal latency and high speed access to memory is required. For example, its low latency provides an advantage in high-performance computing, networking, and embedded systems, such as in telecommunications, medical, military and aerospace applications. The device is also used in gaming applications where fast responses and minimal delays are desired. It is also used in servers to provide fast access to large chunks of data or programs.
In terms of its working principles, the 5F1GQ4UEYIGY is divided into multiple levels or cells, each of which is connected to a memory controller. The memory controller is responsible for all memory accesses, reading or writing each bit or word of the 5F1GQ4UEYIGY the device. Each cell is connected to the memory controller through an address, data in and data out connections, and when a cell is requested, the memory controller provides the address and the data is transferred through the data-in and data-out connections. The memory controller can also perform write operations whereby data is written to the 5F1GQ4UEYIGY.
In summary, the 5F1GQ4UEYIGY is a type of Primary Memory device, which uses static random access memory technology. It is typically used in applications where minimal latency and high-speed access to memory is required and it utilises a memory controller for all read and write operations. The understanding of its application field and working principles is important for the efficient use and deployment of the device in various fields and applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GD5F1GQ4RF9IGY | GigaDevice S... | 1.69 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UEYIGY | GigaDevice S... | 1.69 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UFYIGY | GigaDevice S... | 1.69 $ | 960 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UEYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4RF9IGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UEYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UFYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UEYIGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4RF9IGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UFYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4RF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...