| Allicdata Part #: | GD5F1GQ4UFYIGY-ND |
| Manufacturer Part#: |
GD5F1GQ4UFYIGY |
| Price: | $ 1.69 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | GigaDevice Semiconductor (HK) Limited |
| Short Description: | SPI NAND FLASH |
| More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) SPI - Quad I... |
| DataSheet: | GD5F1GQ4UFYIGY Datasheet/PDF |
| Quantity: | 960 |
| 4800 +: | $ 1.53798 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 1Gb (128M x 8) |
| Clock Frequency: | 120MHz |
| Write Cycle Time - Word, Page: | 700µs |
| Memory Interface: | SPI - Quad I/O |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-WDFN Exposed Pad |
| Supplier Device Package: | 8-WSON (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an integral part of any computer system as it stores information and instructions necessary for the operation of the computer. The GD5F1GQ4UFYIGY application field and working principle is a type of memory that has been gaining popularity since its introduction in the market. This type of memory is highly efficient, reliable and provides a fast data storage solution.
The GD5F1GQ4UFYIGY application field and working principle is a type of Non-Volatile Random Access Memory, or Non-Volatile RAM, which stores data permanently even in the event of a power failure. This type of memory is a major advancement over conventional flash memory, as it can store and retrieve data at speeds comparable to Dynamic Random Access Memory (DRAM). The GD5F1GQ4UFYIGY application field and working principle also offers greater reliability and faster processing times, making it ideal for demanding applications such as gaming and server applications. In addition to its efficient performance, the GD5F1GQ4UFYIGY application field and working principle is also power efficient, making it ideal for use in mobile and embedded applications.
The GD5F1GQ4UFYIGY application field and working principle consists of an array of memory cells which are based on the NAND technology. The cells are arranged as an array of alternating secure and open pages. When a write or read request is submitted, the secure page opens for access and the process begins. Once the process is completed, the secure page closes and the next request can be processed. In this way, the GD5F1GQ4UFYIGY application field and working principle can deliver high-speed performance without consuming a significant amount of power.
The GD5F1GQ4UFYIGY application field and working principle also supports multi-level cell (MLC) decoding, which enables the memory cell to store more than one bit of information in a single cell. This increases the density of the memory, allowing more data to be stored in a smaller space. In addition to its high-performance features, the GD5F1GQ4UFYIGY application field and working principle also offers advanced features such as write protection and error correction. This makes the memory more reliable and durable.
The GD5F1GQ4UFYIGY application field and working principle is now being used in many different devices, such as digital cameras, cell phones, GPS devices and computers. It is also being used in medical and industrial applications. The main advantages of using the GD5F1GQ4UFYIGY application field and working principle are its high speed, capacity, power efficiency and reliability. All of these features have made the GD5F1GQ4UFYIGY application field and working principle a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| GD5F1GQ4UEYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4UF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4UBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4UFYIGY | GigaDevice S... | 1.69 $ | 960 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4UEYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4UFYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4RF9IGY | GigaDevice S... | 1.69 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4UCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4UEYIGY | GigaDevice S... | 1.69 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4RCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4UFYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4RCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4UEYIGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4UCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4RBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4RBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F1GQ4RF9IGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4RF9IGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F4GQ4UBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
| GD5F2GQ4RF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
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GD5F1GQ4UFYIGY Datasheet/PDF