Allicdata Part #: | GD5F4GQ4RCYIGY-ND |
Manufacturer Part#: |
GD5F4GQ4RCYIGY |
Price: | $ 4.09 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | GigaDevice Semiconductor (HK) Limited |
Short Description: | SPI NAND FLASH |
More Detail: | FLASH - NAND Memory IC 4Gb (512M x 8) SPI - Quad I... |
DataSheet: | GD5F4GQ4RCYIGY Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 3.71668 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 4Gb (512M x 8) |
Clock Frequency: | 120MHz |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | 8-WSON (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology has made tremendous progress in the past decade, and its applications in computer science and technology has extended from the traditional memory capacity and speed to a variety of new fields. One such field is GD5F4GQ4RCYIGY application field, which is the studying and application of nanostructured materials for creating memories with significantly improved capacity and speed.
The application field of GD5F4GQ4RCYIGY makes use of a combination of techniques to nanostructure various materials that can then be used for the creation of memories with improved capacity and speed. The techniques include lithography, epitaxy and etching, each of which has a different function in the nanostructuring process. For example, lithography is used to pattern the nanostructures, while epitaxy and etching are used to create the nanostructures out of the material.
The nanostructures created during the GD5F4GQ4RCYIGY application field are then used as the basis for the data storage routine. In this way, nanostructured materials can be used to create incredibly dense, fast, and power-efficient memories that offer improved performance over traditional memory technologies. In addition to improved capacity and speed, nanostructured memories are also more power-efficient than traditional memories since the nanostructure creates less heat.
The working principle behind the GD5F4GQ4RCYIGY application field is the use of nanostructured materials to store data. By using the principles of lithography, epitaxy and etching, nanostructures are created out of the material and then used as the basis for the data storage routine. The nanostructures created by this process are incredibly dense, fast, and power-efficient, offering significantly improved performance over traditional memory technologies. In addition, nanostructured memories require significantly less power than traditional memories due to their low heat production.
In conclusion, GD5F4GQ4RCYIGY application field is a new field in computer science and technology, focused on studying and applying nanostructured materials for the creation of memories with improved capacity, speed, and power efficiency. By using the principles of lithography, epitaxy and etching, nanostructured materials can be created for the purpose of data storage. These nanostructured memories offer significantly improved performance over traditional memories, yet require significantly less power. As memory technology continues to develop, the use of nanostructured memories can become increasingly important and beneficial in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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GD5F1GQ4UEYIGY | GigaDevice S... | 1.69 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UFYIGY | GigaDevice S... | 1.69 $ | 960 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UEYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4RF9IGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UEYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UFYIGY | GigaDevice S... | 2.73 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UEYIGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UBYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UCYIGY | GigaDevice S... | 4.09 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4RCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UBYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F4GQ4UCYIGR | GigaDevice S... | 4.12 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4RF9IGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F1GQ4UFYIGR | GigaDevice S... | 1.76 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4RF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
GD5F2GQ4UF9IGR | GigaDevice S... | 2.83 $ | 1000 | SPI NAND FLASHFLASH - NAN... |
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