GD5F4GQ4UBYIGR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	4Gb (512M x 8)
Clock Frequency:	120MHz
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON (6x8)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

Introduction to Memory

Memory is an important component of computer systems, used to store information for quick access and retrieval. Over the years, computer memory has evolved from large physical devices to smaller electronic components with greater capacity. Today\'s memory technologies are fast, reliable and come in a variety of types, from static RAM to flash memory cards.

GD5F4GQ4UBYIGR Memory Technology

GD5F4GQ4UBYIGR is a type of memory technology developed by Samsung in 2017. It is based on the latest processor and memory technologies, combining ultra-fast DRAM and NAND flash to create an efficient and powerful memory solution. It offers superior performance, large capacity and low power consumption. GD5F4GQ4UBYIGR can be used in both desktop and mobile computing applications.

GD5F4GQ4UBYIGR Application Field

GD5F4GQ4UBYIGR memory technology can be used in a range of desktop and mobile applications, such as enterprise storage systems, high-performance gaming PCs and notebooks, digital signage displays and embedded systems. It is also suitable for industrial applications, such as factory automation and robotics, as well as for applications in the automotive sector and in the healthcare industry.

GD5F4GQ4UBYIGR Working Principle

GD5F4GQ4UBYIGR memory technology uses a combination of ultra-fast DRAM and NAND flash memory to store data. It utilizes a high-speed dual-core processor that combines a data transfer rate of up to 8 Gbps with a low-power draw of only 1.2V. The combination of DRAM and NAND flash enables high-performance computing while controlling power consumption levels, making it an ideal solution for applications requiring both high performance and low power.

Advantages of GD5F4GQ4UBYIGR Memory Technology

GD5F4GQ4UBYIGR has several advantages over other types of memory technology. One of these is its capacity for large amounts of data storage, which is beneficial for applications such as databases, virtual reality, streaming video and other big data applications. Furthermore, its dual-core processor and low power consumption makes it ideal for portable and mobile applications, with longer battery life and less heat production. Finally, its high speed makes it suitable for applications requiring a quick response time.

Conclusion

GD5F4GQ4UBYIGR is a type of memory technology developed by Samsung in 2017, offering superior performance and low power consumption. It can be used for various applications, from enterprise storage systems to mobile and portable devices. Its combination of DRAM and NAND flash enables high performance while controlling power consumption levels. Finally, it has several advantages over other types of memory technology, such as large capacity, low power consumption and fast speed.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description