GP10-4003E-E3/53

Series:	Automotive, AEC-Q101, Superectifier®
Packaging:	Tape & Box (TB)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 1A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	3µs
Current - Reverse Leakage @ Vr:	5µA @ 200V
Capacitance @ Vr, F:	8pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Operating Temperature - Junction:	-65°C ~ 175°C

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Introduction to the GP10-4003E-E3/53

The GP10-4003E-E3/53 is a diode rectifier designed specifically for use in automotive applications. It is designed to provide a high reverse breakdown voltage, high current capacity, and thermal stability. The device is rated for an average current of 3A and a reverse voltage of 400V. The device is also designed to provide low leakage current, low forward voltage drop, and low reverse current (IR).

Applications of the GP10-4003E-E3/53

The GP10-4003E-E3/53 is primarily used in automotive applications. It can be used as a charge pump to provide a stable voltage supply for various microcontrollers and other electronic components. It can also be used in DC-DC converters as a rectifier and can be used in switching power supplies to reduce harmonics. Additionally, the device can be used as a full-wave bridge rectifier for applications that require low voltage ripple.

Working Principle of the GP10-4003E-E3/53

The working principle of the GP10-4003E-E3/53 is based on the fact that diodes are one-way devices. The device consists of a P-Channel and an N-Channel JFET, which act as reversed-biased diodes when voltage is applied in the forward direction. When voltage is applied in the forward direction, electrons flow from the P-Channel JFET to the N-Channel JFET, creating a current. This current then passes through the device and is used to power the circuit.In the reverse direction, the P-Channel and N-Channel JFETs act as reversed-biased diodes. When voltage is applied in the reverse direction, the P-Channel and N-Channel JFETs block the flow of current, preventing the device from conducting. The device\'s high reverse breakdown voltage ensures a certain level of protection against excessive currents, which could damage the device or the circuit.

Conclusion

The GP10-4003E-E3/53 is a diode rectifier designed specifically for use in automotive applications. It provides a high reverse breakdown voltage, high current capacity, low leakage current, low forward voltage drop, and low reverse current. The device\'s working principle is based on the fact that diodes are one-way devices and can be used in a variety of applications, from charge pumps to DC-DC converters and switching power supplies.

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