GP10D-E3/54 Allicdata Electronics
Allicdata Part #:

GP10D-E3/54-ND

Manufacturer Part#:

GP10D-E3/54

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 1A DO204AL
More Detail: Diode Standard 200V 1A Through Hole DO-204AL (DO-4...
DataSheet: GP10D-E3/54 datasheetGP10D-E3/54 Datasheet/PDF
Quantity: 1000
11000 +: $ 0.04614
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: GP10D
Description

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GP10D-E3/54 is an Electronic component, commonly known as a Diode, specifically a Rectifier and one categorized under the Single category. A Diode is an electrical component that is used to control the direction of current in an electrical circuit. The GP10D-E3/54 is a Single type diode, meaning that it has one positive and one negative terminal.The primary application of a Single diode is to provide a rectifying function. A Rectifier will allow current in one direction only and not the other. This type of diode is one of the oldest and most used in electronic circuits and is particularly suited for AC (Alternating Current) to DC (Direct Current) conversion. The GP10D-E3/54 is a fast-recovery rectifier, featuring a high current forward conduction capability of up to 4 Amps, a low forward voltage drop of 1.1 Volt, and a fast reverse recovery time of 50nS.The working principle of the GP10D-E3/54 diode is based on the PN junction diode structure. In a PN junction diode, electrons are near the thin positive layer (N-type silicon), while holes are near the thin negative layer (P-type silicon). An external voltage is applied to the device, and recombination of the electrons and holes begins to occur at the PN junction. The difference between forward and reverse current is due to the way the electrons and holes are recombined. In forward bias, electrons in the N-region are attracted by the positive voltage and cross the junction, while holes in the P-region are repelled away from the junction under the action of the applied external electric field. This causes current to flow through the device, resulting in a steady state current in the forward direction. In the reverse bias mode, the negative voltage on the cathode side of the diode attracts the holes in the N region and repels the electrons in the P region away from the junction. This causes a depletion region to form in the PN junction, which prevents any current from flowing through the device.It is important to note that the reverse voltage applied to the diode must be limited to a maximum of 45 Volts in order to ensure the device will be safe. If the reverse voltage is greater than 45 Volts, the device will experience thermal runaway and can become extremely hot and potentially cause damage to the diode. In conclusion, the GP10D-E3/54 diode is an efficient, fast-recovery type rectifier that works based on the PN junction diode structure. It is mainly used in AC to DC conversion applications and has a high current forward conduction capability of 4 Amps, a low forward voltage drop of 1.1 Volt, and a fast reverse recovery time of 50nS. The main concern to take note of is that it must be operated at less than 45 Volts for maximum safety.

The specific data is subject to PDF, and the above content is for reference

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