Allicdata Part #: | GP10-4005HM3/54-ND |
Manufacturer Part#: |
GP10-4005HM3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 500V 1A DO204AL |
More Detail: | Diode Standard 500V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | GP10-4005HM3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, Superectifier® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 500V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 500V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Application Field and Working Principle of GP10-4005HM3/54
GP10-4005HM3/54, a single rectifier diode, is a semiconductor device that facilitates the flow of current from one side (anode) to the other side (cathode). It is commonly used in power conversion, rectification, and in various other applications. For instance, it is widely used in motor control systems, motor drives, solar energy systems and switch mode power supplies. As rectifier, it prevents the reverse flow of current, so it can protect other devices and components connected to it.
Construction of GP10-4005HM3/54
GP10-4005HM3/54 is made of a PN Junction, a single piece of pure semiconductor with both “negative” and “positive” charges in the same material. At the junction area of this single piece, a depletion layer is created – this layer acts as a barrier that prevents the flow of current from one side to the other.
Working Principle
GP10-4005HM3/54 works based on PN Junction and allows current to move in only one direction. The PN-junction junction is created by doping p-type semiconductor material with n-type impurities like Boron and Phosphorous. These impurities are known as dopants and they add charges to the semiconductor material. At the junction area, the N-type and P type materials interact, forming a depletion zone which reduces the diffusion of carriers, thus reducing the current flow in either direction.
When a voltage is applied across the PN junction, majority carriers (normally electrons) move from one side to the other side of the junction in the forward direction. When this happens, the holes in the P-type material move in the opposite direction, in the reverse direction. Thus, the current flows in one direction only and the diode acts like a rectifier.
GP10-4005HM3/54 Applications
GP10-4005HM3/54 is mainly used as a rectifier in applications such as motor control systems, motor drives, solar energy systems, and switch mode power supplies. The semiconductor rectifier can also be used to measure power or resistance across circuits. It is also used in circuit protection applications to protect the other devices and components connected to the circuit from high voltage, current, or short circuit. It is also used for AC-DC power conversion and to protect low-voltage components connected to the circuit.
The specific data is subject to PDF, and the above content is for reference
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GP10-4004-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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GP10-4003-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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GP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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