Allicdata Part #: | GP10BE-M3/73-ND |
Manufacturer Part#: |
GP10BE-M3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO204AL |
More Detail: | Diode Standard 100V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | GP10BE-M3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The GP10BE-M3/73 belongs to the family of diodes, more specifically rectifiers and in particular to the single ones. It is designed, developed and manufactured with all the necessary safety and performance regulations, allowing it to be commercialized and used in a wide range of products and applications. It has been optimized for use in military and aerospace products and provides high performance over a wide operating temperature range of -55 to +150 °C.
GP10BE-M3/73 is a diode rectifier, which means that it directs the current in one direction, allowing it to flow through the semiconductor material, while blocking the current in the opposite direction. Electrons flow from the anode, which is the positive side, towards the cathode, which is the negative side. As the electrons move through the device they pass through a junction that forces electrons to go in one direction, this is known as rectifying.
The diode works by using a semiconductor PN junction. The junction consists of two different layers, which are n-type and P-type semiconductor materials. This junction allows electron current to flow in one direction and blocks electron current from flowing in the other. When electron current passes through the anode side, the current builds up a negative charge on the n-type material, while electron current passing through the cathode side will build a positive charge on the P-type material.
The GP10BE-M3/73 is a low voltage device and has a high voltage capability of up to 150V and high current capability of up to 10A. It is available in a variety of packages and packages sizes, enabling it to fit into tight spaces. It is a high reliability rectifier and is capable of operating from -55 to +150 °C temperature range, which makes it well-suited for military and aerospace applications. The device is designed to last for a long time and perform as specified.
The GP10BE-M3/73 is also designed with built-in protection features such as an overtemperature shut-off and overcurrent protection. This helps to prevent the device from getting damaged due to excessive heat or excessive current. The device has also passed a variety of tests, making it capable of surviving a variety of harsh conditions ranging from electrostatic discharge, to extreme thermal conditions.
The GP10BE-M3/73 is a popular choice among engineers and designers due to its features, low price, and availability in a variety of packages. It is widely used in medical, automotive, consumer, and industrial applications. It is most commonly used as a rectifier, but can also be used as a switch or a sensor in certain applications. It is also commonly used in power supplies, as it is capable of handling high current loads in a compact package.
In conclusion, the GP10BE-M3/73 is a high performance single diode rectifier, capable of handling high voltage and current applications. It is designed for use in both military and aerospace applications and can be used in a variety of devices and applications. It offers built-in protection features, and is optimized for use in both high temperature and low temperature environments. It is widely used in various applications and is a popular choice among engineers and designers.
The specific data is subject to PDF, and the above content is for reference
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GP10-4003-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4002-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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