Allicdata Part #: | GP10KEHE3/54-ND |
Manufacturer Part#: |
GP10KEHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 1A DO204AL |
More Detail: | Diode Standard 800V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | GP10KEHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | GP10K |
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GP10KEHE3/54 is a single diode rectifier, designed mainly for a wide range of commercial, industrial and telecom applications. It is constructed from a special silicon material, and has an optimized combination of high voltage, low current, and high temperature characteristics. The device is an E3/54 series single diode, including a fast recovery rectifier, an ultra-high temperature rectifier and a fast recovery rectifier with an additional high voltage protection. The device is designed for use in various commercial and industrial applications where reverse voltage protection is needed.
The GP10KEHE3/54 operates with a forward voltage of 1.3V, a current rating of 10A, and a reverse voltage of 0.44V. The reverse leakage current is less than 10µA at 25°C. The maximum operating temperature is 150°C and the junction temperature is 125°C. The peak repetitive reverse voltage is 600V. The device is available in two different packages, the TO-220-3FU and the OH-3FU.
The working principle of the GP10KEHE3/54 is based on the PN junction formed between two types of semiconductor material, n-type and p-type. The device is operated by applying a forward voltage across the PN junction. Electron-hole pairs are generated, causing current to flow in one direction. The electrons move to the n-type material and the holes move to the p-type material. This type of current flow is known as rectification, which is useful in power supplies and voltage regulators. In the reverse direction, the electron-hole pairs are depleted and the depletion region of the PN junction provides reverse voltage protection.
The GP10KEHE3/54 is the ideal solution for applications such as switch mode power supplies, converters, motor drives and power supply circuits, where high efficiency and reverse voltage protection are needed. The device has excellent surge handling capability, high temperature operation and low reverse leakage current. It also has a wide temperature range due to its temperature coefficient and reverse voltage protection.
The device has been tested extensively and is found to be reliable with a long life expectancy. The device is CE certified, RoHS compliant and UL listed, so it meets all safety standards. In addition, the device offers excellent EMI shielding, making it suitable for applications where high levels of electromagnetic interference are expected. All in all, the GP10KEHE3/54 is a reliable, efficient, and cost-effective solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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GP10-4002-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4002-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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