Allicdata Part #: | GP10M-4007E-M3/73-ND |
Manufacturer Part#: |
GP10M-4007E-M3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1A DO204AL |
More Detail: | Diode Standard 1000V 1A Through Hole DO-204AL (DO-... |
DataSheet: | GP10M-4007E-M3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, Superectifier® |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 7pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The GP10M-4007E-M3/73 Diode is a type of rectifier that is used in a wide range of applications, such as power supplies, switching systems and voltage regulation circuits. As a single rectifier diode, it is designed to block reverse voltage and allow forward voltage to pass, making it ideal for use in High and Low Voltage applications, as well as Industrial, Automotive and Aerospace applications.
The GP10M-4007E-M3/73 Diode is constructed from a single chip integrated circuit using a field effect power MOSFET, which enables it to provide low voltage and current losses. The chip also incorporates a reverse diode protection circuit to protect against voltage reversal, as well as a resonant snubber circuit for improved efficiency. The diode is rated for a peak forward current of 400A and a peak reverse voltage of 7V.
The diode\'s main function is to control the flow of current in a circuit or power device, ensuring that only current in one direction flows. In order to accomplish this, the GP10M-4007E-M3/73 has two leads – the anode and the cathode – which must be connected correctly in order for it to work correctly. The anode is the positive end of the diode, and the current flows from the anode to the cathode when the voltage applied to the diode is greater than the diode’s “turn-on voltage”.
When the applied voltage is less than the “turn-off voltage” of the diode, no current will flow. This allows the diode to effectively regulate the voltage and current going through a circuit. It also allows the circuit to be protected from short circuits, which may occur if a circuit is connected incorrectly or if there is a power surge.
In addition to being used in power supplies and voltage regulation circuits, the GP10M-4007E-M3/73 Diode can also be used in motor control, lighting control and motor speed control systems. It can also be used in AC/DC converters, battery chargers, and other power conversion and energy storage applications.
The GP10M-4007E-M3/73 Diode is designed for use in both high and low power applications, making it a versatile device for a variety of applications. The diode offers superior efficient performance and is designed to be robust and reliable. It also has low voltage and current losses, making it ideal for power and energy management circuits.
The specific data is subject to PDF, and the above content is for reference
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GP10-4004-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4002-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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