Allicdata Part #: | GP10YE-E3/73-ND |
Manufacturer Part#: |
GP10YE-E3/73 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.6KV 1A DO204AL |
More Detail: | Diode Standard 1600V 1A Through Hole DO-204AL (DO-... |
DataSheet: | GP10YE-E3/73 Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.07219 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1600V |
Capacitance @ Vr, F: | 5pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | GP10Y |
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The GP10YE-E3/73 is a single rectifier diode, designed primarily for general purpose use, manufactured by a leading semiconductor and power management specialist. The GP10YE-E3/73 combines two-terminal, cost-effective performance, with an optimized design for power control applications. As such, it is a reliable choice for a variety of applications, such as air compressors, electric vehicles, and industrial equipment.
The GP10YE-E3/73 utilizes a low forward voltage drop and a low reverse-leakage current, making it an efficient, reliable device for applications requiring high power control. Additionally, the diode\'s low reverse recovery time provides it with a high degree of protection from voltage transients. As a result, the GP10YE-E3/73 is suitable for a variety of applications, including rectifier circuits, voltage doublers, and other power control systems.
The GP10YE-E3/73\'s structure is a finely designed three-layer structure. It features an hyperabrupt, high doping lifetime PN junction that eliminates the need for a guard ring diode, resulting in an efficient, cost-effective device. Additionally, the diode\'s low-leakage current ensures a low noise operation in applications that require a high level of sensitivity. The low forward voltage drop and ability to deliver maximum power at low temperatures make the GP10YE-E3/73 an efficient, cost-effective option for a variety of applications.
The GP10YE-E3/73\'s operating temperature range is -40°C to 175°C. The diode\'s maximum rated power, forward current and reverse voltage ratings are all dependent upon its thermal design. Its maximum ratings are 600V and 2A, with a maximum power dissipation of 300mW. The GP10YE-E3/73 has a thermal resistance of 2˚C/W, allowing it to operate at the desired temperature without the need for a heatsink.
The GP10YE-E3/73 is an efficient, reliable, cost-effective device for a variety of applications, such as air compressors, electric vehicles, and industrial equipment. Its finely designed three-layer structure, low forward voltage drop, and ability to deliver maximum power at low temperatures make the GP10YE-E3/73 an ideal choice for applications requiring high power efficiency and control. Additionally, its wide operating temperature range and excellent thermal resistance allow for a long product lifetime.
The specific data is subject to PDF, and the above content is for reference
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GP10-4004-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10F-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
GP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4002-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10-4003-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10-4004-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10-4005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10-4006-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
GP10-4007-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
GP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
GP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
GP10D-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
GP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
GP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
GP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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