GSOT04C-E3-08 Allicdata Electronics

GSOT04C-E3-08 Circuit Protection

Allicdata Part #:

GSOT04C-E3-08TR-ND

Manufacturer Part#:

GSOT04C-E3-08

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 4V 14.3V SOT23-3
More Detail: N/A
DataSheet: GSOT04C-E3-08 datasheetGSOT04C-E3-08 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.05954
6000 +: $ 0.05623
15000 +: $ 0.05127
30000 +: $ 0.04796
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Voltage - Clamping (Max) @ Ipp: 14.3V
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 310pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 429W
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Series: --
Voltage - Breakdown (Min): 5V
Voltage - Reverse Standoff (Typ): 4V (Max)
Unidirectional Channels: 2
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS diodes are designed to protect sensitive electronic components from transient overvoltage events. The GSOT04C-E3-08 is a specific type of TVS diode used for general-purpose applications, and its working principle is based on the Zener Breakdown theory.

The GSOT04C-E3-08 is a two electrode device consisting of an anode and a cathode, with the cathode connected closer to the surface. The diode uses a nonlinear Metal Oxide Semiconductor (MOS) structure, consisting of a highly doped semiconductor substrate and an insulating layer. This insulation layer has an extremely low breakdown voltage, which is why this diode is especially useful for protecting sensitive circuits from ESD, electrical noise, and other overvoltage events.

When the applied voltage exceeds the breakdown voltage of the insulation layer, an avalanche breakdown occurs. This event causes a large amount of current to flow quickly and provide a short-circuit path between the anode and cathode of the diode, thus stopping the voltage transient. This process is known as the Zener Breakdown effect.

This diode is unique because of its tiny size and high power handling capacity. It can be used with both AC and DC circuits and its tiny size makes it especially useful for applications where space is limited. It is also compatible with lead-free reflow soldering processes.

The GSOT04C-E3-08 is typically used in general-purpose applications such as power supplies, communication systems, process control systems, consumer electronics, and automotive electronics. It can be used to provide surge protection, EMI/RFI protection, and transient voltage suppression (TVS). It is also capable of withstanding overvoltage, reverse transients, and induced transients from the environment.

In summary, the GSOT04C-E3-08 is a two electrode device using a nonlinear Metal Oxide Semiconductor (MOS) structure to provide protection from overvoltage events, such as ESD, electrical noise, and transients. Its small size and high power handling capacity make it ideal for general-purpose applications.

The specific data is subject to PDF, and the above content is for reference

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