Allicdata Part #: | HER301GR0G-ND |
Manufacturer Part#: |
HER301G R0G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 3A DO201AD |
More Detail: | Diode Standard 50V 3A Through Hole DO-201AD |
DataSheet: | HER301G R0G Datasheet/PDF |
Quantity: | 1000 |
3750 +: | $ 0.10171 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
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HER301G R0G Application Field and Working Principle
The HER301G R0G is a silicon rectifier diode manufactured by Japanese semiconductor giant Hitachi, Inc. It is a fast switching diode, suitable for any high current application. Typical applications include power rectification, voltage clamp, DC-DC converter, switch-mode power supplies, protection circuits and reverse polarity protection.
The HER301G R0G is an epitaxial silicon diode, with a maximum forward current rating of 11A, reverse current of 10mA and maximum forward surge current of 100A. It has a junction capacitance of 8.2 pF, reverse recovery time of 10ns and forward voltage drop of 1.1V. The diode has the ratings of 300V maximum reverse voltage, 500V maximum forward voltage, 6.9V peak forward voltage, 0.36V typical junction voltage and 800uA typical leakage current.
The HER301G R0G is used for different types of rectification, as it offers low reverse leakage and fast switching speed. The diode also has a low junction capacitance which allows it to be switchable faster. It offers high reverse voltage and fast reverse recovery time to ensure its high performance. When used as a rectifier, it is able to offer high forward current, low voltage drop, and fast switching speed.
The HER301G R0G has a simple and reliable construction, with a semi-insulating silicon substrate and a single layer of polysilicon. This makes it suitable for board level designs that require a fast switching time, low loss and high reliability. The diode is also easy to solder and can adapt to different types of boards.
The working principle of the HER301G R0G is very simple. When a positive voltage is applied to the diode\'s anode, current flows from the anode to the cathode, resulting in a forward conduction. When a negative voltage is applied, the reverse current flow is blocked, resulting in a reverse blocking. The HER301G R0G also has a reverse recovery time, which is the amount of time it takes for the device to recover from its blocked state to its forward conduction.
In conclusion, the HER301G R0G is a fast switching diode suitable for any high current applications, like power rectification, DC-DC converters, switch-mode power supplies, protection circuits and reverse polarity protection. It offers low forward voltage drop, high forward current, and fast switching speed, thanks to its simple yet reliable construction and low junction capacitance. The HER301G R0G is categorized as a Single Rectifier diode.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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HER301GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
HER301GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
HER301G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER301G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER301G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
HER304G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER306G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER305G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
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