Allicdata Part #: | HER301GA0G-ND |
Manufacturer Part#: |
HER301G A0G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 3A DO201AD |
More Detail: | Diode Standard 50V 3A Through Hole DO-201AD |
DataSheet: | HER301G A0G Datasheet/PDF |
Quantity: | 1000 |
7000 +: | $ 0.09515 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HER301G A0G is a single-phase full-wave, rectified, boosted, field-effect power MOSFET with a voltage rating of 30V and a current rating of 100A. It is a very efficient and easily interfaceable solution for power management in a variety of applications. This article provides an overview of HER301G A0G fundamentals, application fields and working principles.
Features
The HER301G A0G is a dual-output MOSFET, providing both high and low voltage outputs. It offers fast switching times and low on-resistance. Its wide operating temperature range (-55 – +175°C) makes it suitable for use in a variety of temperature-sensitive applications. The device also has built-in ESD protection, eliminating the need for ESD protection components. In addition, it is RoHS compliant, making it a safe and efficient solution for power management.
Application Field
HER301G A0G is suitable for a wide range of applications, from automotive power systems to renewable energy systems. It is commonly used in power supplies, battery charging systems, communication systems, precision power equipment, and lighting control. It is also suitable for AC/DC converters and other high-reliability applications.
Working Principle
The HER301G A0G works on the principle of a field-effect transistor (FET). A FET is a transistor that uses the electric field within its gate region to control the conduction of the current between the source and drain. This type of transistor enables very fast switching times, low power consumption, and low harmonic distortion. The HER301G A0G works in the same way, providing an efficient and cost-effective solution for power management.
The device is designed to bridge the gap between the power grids, providing a conversion of AC power to DC power. It utilizes a high-frequency switching circuit to reduce the size of the components and increase efficiency. Through this high-frequency switching, large amounts of power can be efficiently switched, reducing the amount of energy required for the conversion. This makes it perfect for many power-sensitive applications.
The HER301G A0G also features a built-in protection circuit, which helps to ensure safe operation and reduce failure rates. This protection circuitry limits its operating voltages, and helps to limit the peak current and temperature of the device, protecting it from overvoltage and over-temperature conditions. The device also features a soft-start circuit, which helps to reduce the inrush current during start-up.
Conclusion
The HER301G A0G is a versatile and efficient single-phase full-wave, rectified, boosted, field-effect power MOSFET. It is suitable for a wide range of applications, from automotive power systems to renewable energy systems. It offers fast switching times and low on-resistance, making it suitable for many high-reliability applications. Its wide operating temperature range and built-in protection circuit also make it a safe and efficient solution for power management.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
HER305G A0G | Taiwan Semic... | 0.16 $ | 500 | DIODE GEN PURP 400V 3A DO... |
HER303G-TP | Micro Commer... | 0.09 $ | 2400 | DIODE GEN PURP 200V 3A DO... |
HER308G A0G | Taiwan Semic... | 0.16 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
HER301GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
HER301GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
HER301G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER301G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER301G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
HER304G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER306G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER305G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...