Allicdata Part #: | HER306GT-G-ND |
Manufacturer Part#: |
HER306GT-G |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE GEN PURP 600V 3A DO201AA |
More Detail: | Diode Standard 600V 3A Through Hole DO-27 |
DataSheet: | HER306GT-G Datasheet/PDF |
Quantity: | 1000 |
1200 +: | $ 0.14169 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AA, DO-27, Axial |
Supplier Device Package: | DO-27 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The HER306GT-G is a single rectifier diode that is used to direct current in one direction and prevent it from flowing through in the other. The HER306GT-G is one type of single rectifier diode, and is an ideal choice for applications where high temperature performance is required. The HER306GT-G is especially useful in scenarios where it needs to operate in temperatures of up to 150 degrees Celsius.
The HER306GT-G is an ultra-fast, high temperature rectifier diode with a small junction capacitance. An ultra-fast diode is one that has the ability to respond quickly to changing conditions, the HER306GT-G doing so in the order of nanoseconds. It has a high junction temperature, meaning that it can operate reliably in very hot environments up to its maximum temperature. As well as this, its low forward voltage drop of 1.2V maximises efficiency. The HER306GT-G is another example of an ideal diode for specific applications.
The applications for HER306GT-G can range from automotive, telecom and datacom, to power supplies and LED lighting, among many others. It requires very little power, so it is energy efficient. It is also suitable for applications where high-frequency and efficiency are important. When used in the latter types of applications, the HER306GT-G offers a low forward voltage drop, allowing the device to transfer more power.
The working principle of the HER306GT-G can be broken down into two stages. During the forward bias stage, current flows easily through the device, due to the voltage difference between the anode and the cathode. When the voltage reaches a certain value known as the “breakdown voltage”, the device then enters what is known as reverse bias. In this state, current is prevented from flowing through, due to the higher resistance created by the reverse bias.
The HER306GT-G is a single rectifier diode that offers a great combination of power efficiency, quick response time and reliability in high temperature applications. Its low forward voltage drop allows it to transfer more power while its small junction capacitance enables it to respond quickly. It is an ideal choice for a range of applications, such as automotive, telecom, datacom, power supplies, LED lighting, and many others.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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HER305GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
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HER308GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
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HER302GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
HER301G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER301G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER301G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
HER304G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER306G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER305G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
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