Allicdata Part #: | HER302GB0G-ND |
Manufacturer Part#: |
HER302G B0G |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 3A DO201AD |
More Detail: | Diode Standard 100V 3A Through Hole DO-201AD |
DataSheet: | HER302G B0G Datasheet/PDF |
Quantity: | 1000 |
7000 +: | $ 0.08715 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Rectifier diodes are widely employed in daily use, from plug sockets to car headlights, and their variant types are deployed in various industries and applications. HER302G B0G is a widely used single rectifier diode, which is widely used in various applications in electronics. This paper aims to discuss the application fields and working principles of HER302G B0G.
Characteristics of HER302G B0G
HER302G B0G is a single rectifier diode, which is widely used in many electronics application. The type number HER302G indicates that it is a rectifier diode in a cartridge package, planted with leads separated with 0.7 inch at a mounting height of 0.3 inch. Its main features include low forward voltage, low reverse leakage current, good temperature stability and in high forward surge current capability. It can also be used in applications from 5A to 36A peak pulsed power switching regulators, and withstands reverses voltages from 400V to 600V.
Application Field of HER302G B0G
Rectifier diodes with better characteristics such as HER302G B0G are often used in power system and many electronics applications, some of which are discussed below.
Power systems
HER302G B0G is widely used in PWM (pulse width modulation) driven AC-DC power supplies and DC-DC power supplies. It acts as a protective device in the power systems, blocking discharging current while allowing current only in one direction, i.e. from anode to cathode. Furthermore, it functions as a switch, working in conjunction with a microprocessor and a power supply.
Electronic control systems
In electronic control systems, HER302G B0G is used to regulate the flow of electrons across the circuit. As it can block the discharge current as well as switching current in one direction, HER302G B0G is often used to regulate the current in a circuit while protecting the circuit from damage due to a short circuit or over-current.
Working principle of HER302G B0G
HER302G B0G, as a popular rectifier diode, is mainly composed of a N-type and a P-type semiconductor. N-type semiconductor is known as “negative-type”, while P-type semiconductor is known as “positive-type”. The N-type semiconductor has electrons as majority carriers, while the P-type has holes as majority carriers. When HER302G B0G is forward biased, i.e. voltage is applied across the two terminals so that the N-type terminal is higher than the P-type terminal, the electrons from the N-type semiconductor will flow to the P-type semiconductor and be combined with the holes. Thus, current is allowed to pass through the device in one direction. Conversely, l when HER302G B0G is reverse biased, i.e. voltage is applied across the two terminals so that the P-type terminal is higher than the N-type terminal. The electrons will be repelled because the potential of the P-type terminal is higher than the N-type terminal. Thus, current will not flow through the device, protecting the circuit from damage.
Conclusion
HER302G B0G is a widely used single rectifier diode, which finds applications in various fields. In power systems, it serves as a protective means blocking discharge current to protect the circuit. In electronic control systems, it serves as a switch working in combination with a power source and a microprocessor. Its working principle is based on the flow of electrons across two terminals.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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HER301GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308GT-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
HER301GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308GA-G | Comchip Tech... | 0.15 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
HER301G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER301G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304G B0G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER301G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
HER302G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
HER303G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
HER304G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER305G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER308G R0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
HER304G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
HER306G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G A0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
HER305G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
HER306G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
HER307G B0G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
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