HER303G B0G Allicdata Electronics
Allicdata Part #:

HER303GB0G-ND

Manufacturer Part#:

HER303G B0G

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 200V 3A DO201AD
More Detail: Diode Standard 200V 3A Through Hole DO-201AD
DataSheet: HER303G B0G datasheetHER303G B0G Datasheet/PDF
Quantity: 1000
7000 +: $ 0.08715
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes - Rectifiers - Single: HER303G B0G Application Field and Working Principle

The HER303G B0G rectifier diode is one of the most versatile, popular, and widely used rectifier diodes available on the market. It is particularly suitable for medium frequency applications such as power supplies, UPS systems, or voltage converters. This article will discuss the application field and working principle of the HER303G B0G rectifier diode.

Application Field

The HER303G B0G rectifier diode is a versatile, high-performance rectifier diode intended for use in medium frequency applications. It is capable of withstanding a peak repetitive reverse voltage of 1200V and a peak non-repetitive reverse voltage of 4500V. This makes it suitable for use in power supplies, UPS systems, voltage converters, and any application requiring a reliable and rugged rectifier diode. Additionally, the operating temperature range for the HER303G B0G is between -40°C and 125°C, making it suitable for use in a wide variety of environments.

Working Principle

The HER303G B0G rectifier diode works by allowing the flow of current in one direction while blocking the flow in the reverse direction. This allows it to convert alternating current into direct current, or DC. The HER303G B0G rectifier diode makes use of a p-n junction, which is a structure formed by combining two different semiconductor materials. This structure creates a region with a positive charge at one end and a negative charge at the other. When voltage is applied to the diode, the positive charge repels the negative charge, allowing the current to flow in only one direction. The HER303G B0G rectifier diode is also equipped with an internal protection mechanism that prevents the flow of current in the reverse direction above a certain voltage.

Conclusion

The HER303G B0G rectifier diode is an incredibly versatile, reliable, and high-performance diode, suitable for use in a wide variety of applications. Its peak non-repetitive reverse voltage of 4500V, temperature operating range of -40°C to 125°C, and internal protection mechanism make it capable of handling a wide range of applications, such as power supplies, UPS systems, or voltage converters. Additionally, its p-n junction structure allows it to efficiently convert alternating current into direct current.

The specific data is subject to PDF, and the above content is for reference

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