Allicdata Part #: | HER306-AP-ND |
Manufacturer Part#: |
HER306-AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GPP HE 3A DO-201AD |
More Detail: | Diode Standard 600V 3A Through Hole DO-201AD |
DataSheet: | HER306-AP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 40V |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The HER306-AP is a single rectifier diode from Vishay Components, suitable for a variety of applications and uses. Its common applications include general rectification, freewheeling, and reverse blocking. This device also has a maximum VRRM of 400V, maximum average forward current of 3.0A, and maximum continuous reverse current of 5.0mA at a temperature of 25°C.
The HER306-AP diode is best suited for use in medical and telecommunications, automotive, and industrial applications. This device features an epoxy molded package suitable for use in high-temperature and harsh environments. Its low capacitance of 3.2 pF is ideal for high-frequency switching applications. The HER306-AP also features a maximum operating temperature of 175°C, enabling its use in electronic equipment with high-reliability requirements.
The fundamental operating principle of the single rectifier diode, such as the HER306-AP, is a process known as electron-hole pair recombination. In this process, the flow of electrons is controlled to form a low internal resistance path from one side of the diode to the other. During the forward bias, i.e. the period when the anode positive potential is more positive than the cathode potential, the electrons move from the n-type material to the p-type material. At the same time, the positive potential drives the holes in the p-type material toward the n-type material. When forward bias is applied, the electrons and holes will meet in the middle of the junction, thus completing an electricity path. During the reverse biased voltage, i.e. when the anode potential is negative relative to the cathode potential, the electrons cannot cross the junction and no current will flow.
The HER306-AP diode offers high reliability and low leakage current to ensure extended device life. This device also features a very low temperature-dependent turn-on voltage to help guarantee its performance in various temperature ranges. The HER306-AP is also relatively easy to install and offers a low power dissipation capability.
In conclusion, the HER306-AP is a single rectifier diode from Vishay Components that is suitable for a range of applications. Its epoxy molded package and low capacitance make it suitable for use in high-temperature and harsh environments. Its high reliability and low leakage current make it an ideal choice for medical and telecommunications, automotive, and industrial applications. Its low temperature-dependent turn-on voltage and low power dissipation capability make it an excellent choice for a variety of electronic equipment.
The specific data is subject to PDF, and the above content is for reference
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