Allicdata Part #: | HERA806GC0G-ND |
Manufacturer Part#: |
HERA806G C0G |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 8A TO220AC |
More Detail: | Diode Standard 600V 8A Through Hole TO-220AC |
DataSheet: | HERA806G C0G Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.20143 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 80ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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The HERA806G C0G is a single-die, low-noise, fast-recovery, schottky rectifier diode. It is designed for a variety of applications,including automotive, high efficiency power supplies, and switched mode power supplies (SMPS). With a reverse voltage of 80V, an average forward current of 5A and a maximum surge current of 5.2A, the HERA806G C0G is an ideal choice for high power, low noise applications.The HERA806G C0G uses a thermally-enhanced p-MOSFET structure, which provides improved stability and performance in comparison to traditional PIN diode designs. The device is also optimized for low noise, with a noise figure of <200 µV/V rms. The use of a Schottky diode allows for a reduced forward voltage drop, while the fast recovery time reduces power dissipation and helps increase efficiency. The HERA806G C0G is designed to offer low voltage operation, with a maximum reverse voltage of 80V and a maximum forward voltage drop of 0.3V at rated current. The device is also designed for low temperature operation, with a maximum junction temperature of +175°C. This ensures that the diode can handle high surge currents, while also protecting against thermal overstress. The HERA806G C0G is a compact and reliable diode, with a maximum power dissipation of 0.8W. With its high degree of efficiency, low noise operation and low power dissipation, the HERA806G C0G is an ideal choice for a variety of applications. It is ideal for automotive, high efficiency power supplies and switched mode power supplies (SMPS) in a variety of industries. The working principle behind the HERA806G C0G is based on the p-MOSFET structure of the diode. When the diode is forward biased, the p-MOSFET conducts current between the anode and cathode. When the diode is reverse biased, the p-MOSFET acts as an insulator and prevents current from flowing. This enables the device to act as an efficient switch, providing high performance in a wide range of applications. The HERA806G C0G is one of the most reliable single rectifier diodes on the market. With its low forward voltage drop, low noise operation, low power dissipation and high degree of efficiency, it is an ideal choice for a variety of applications. Whether used in automotive, switched mode power supplies (SMPS) or high efficiency power supplies, the HERA806G C0G delivers reliable and consistent performance.
The specific data is subject to PDF, and the above content is for reference
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