Allicdata Part #: | HERAF1007GC0G-ND |
Manufacturer Part#: |
HERAF1007G C0G |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 10A ITO220AC |
More Detail: | Diode Standard 800V 10A Through Hole ITO-220AC |
DataSheet: | HERAF1007G C0G Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.22061 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 80ns |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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HERAF1007G C0G is a type of single rectifier diodes. This device is designed and manufactured with a high cost-effective material. It is ideal for general-use applications that do not require high switching speeds. Its most promising feature lies in its low contact resistance, which makes it suitable for high temperature operation.
The HERAF1007G Cis a single phase diode rectifier. It is a top-level three-terminal circuit with a reverse bias blocking function. It can be used in AC or DC applications. The main feature of this element is that it has a low leakage current, as is typical with diodes. In reverse blocking mode, it also helps prevent reverse current flowing in the circuit. It also has a high temperature coefficient of performance, making it ideal for high temperature applications.
In terms of applications, the HERAF1007G C0G is suitable for a variety of use cases. It is mainly used for regulating high temperature operations, such as in power plants, electric networks, and other large industrial operations. It is also suitable for large-scale power systems, where a large number of small diode modules are connected in series. It is also used for voltage stabilization and wave shaping, as well as for rectifier module design.
The working principle of the HERAF1007G C0G is quite simple. Its construction consists of two semiconductor layers: the anode, consisting of n-type silicon, and the cathode, consisting of p-type silicon. When power is applied, the current flow is from the anode to the cathode, and when the voltage reaches a certain level, it is reversed, preventing any reverse current from occurring. This process is repeated with each successive cycle.
The HERAF1007G C0G is also designed with an excellent high temperature coefficient of performance. This is an important feature, as it helps to ensure that the element will not overheat, even in high temperature environments. This also helps to minimize backflow of electricity, which could potentially damage other components in the circuit. Finally, this element has a low voltage threshold voltage, which makes it suitable for use in high voltage applications.
In conclusion, the HERAF1007G C0G is a single rectifier diode that can be used for a variety of high temperature applications. It has an excellent high temperature coefficient of performance, as well as a low contact resistance that makes it suitable for high temperature operations. It also has a low voltage threshold voltage and can be used in applications that require large numbers of diode modules. Finally, it has a blocking function, preventing any reverse current from occurring, which helps to ensure that the circuit is protected.
The specific data is subject to PDF, and the above content is for reference
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