Allicdata Part #: | HERAF803GC0G-ND |
Manufacturer Part#: |
HERAF803G C0G |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 8A ITO220AC |
More Detail: | Diode Standard 200V 8A Through Hole ITO-220AC |
DataSheet: | HERAF803G C0G Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.20143 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The HERAF803G C0G diode features a very low forward voltage drop, offering a higher conductance than comparable rectifiers in its class. This makes it ideal for applications where very low forward voltage drops are needed, such as high-efficiency step-down switching and PFC circuits, general rectifier and power switch applications, and especially for energy-saving designs. It also features an extremely low reverse-leakage current and provides superior thermal managing, making it an excellent choice for high power density applications.
HERAF803G C0 G single rectifier is a new generation of rectifier diodes, which consists of a PN-junction integrated into a single semiconductor chip. As a junction diode, it has two terminals: the anode and the cathode. Its functionality is based on the electrostatic effect of applying a bias voltage on the diode junction and the principle of a PN-junction based diode. When a positive voltage is applied to the anode and a negative voltage is applied to the cathode, the junction conducts current to pass through. The HERAF803G C0 G single rectifier is an efficient, low voltage rectifier which offers excellent performance in high frequency, high power and temperature applications.
In terms of construction, this HERAF803G C0 G rectifier has a small, non- inductive, highly efficient, ceramic package which provides superior thermal management and electrical performance. Its metalizing Overlead on Ceramic (MOC) package also features a high junction temperature rating, making it ideal for high temperature operation. In addition, it has highly reliable electrical specifications, including low reverse current, wide dynamic operating range, low reverse recovery times and high forward surge current.
Moreover, this single rectifier can be used in various applications, such as power protection circuits, input voltage smoothing and polarity protection circuits. It can also be used in switching and linear regulator circuits, as well as in switching power supplies and battery chargers. Its low forward voltage drop, high efficiency and low reverse leakage current make it suitable for high-efficiency power converters, power factor correctors and synchronous rectifier applications.
In conclusion, the HERAF803G C0 G single rectifier is an efficient and robust solution for a wide range of rectifying and power switch circuits, and especially for energy-saving designs. It features low forward voltage drop, high thermal management, low reverse current and superb reliability. Its small, non-inductive and highly efficient MOC package makes it ideal for high power and high temperature applications.
The specific data is subject to PDF, and the above content is for reference
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