Allicdata Part #: | HERAF805GC0G-ND |
Manufacturer Part#: |
HERAF805G C0G |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 400V 8A ITO220AC |
More Detail: | Diode Standard 400V 8A Through Hole ITO-220AC |
DataSheet: | HERAF805G C0G Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.20143 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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HERAF805G C0G application fields and working principles can be found in many different devices. Some examples include transistors, rectifiers, and amplifiers. The HERAF805G C0G is a single terminal, dual-gate n-channel junction field-effect transistor (JFET) intended for use in applications requiring low noise, high gain, and high frequency performance. This device is designed for use as an input gate in various circuits.
The HERAF805G C0G works by using a gate terminal that is electrically connected to the source terminal in order to control the voltage of the drain terminal. The device functions as a kind of rectifier, allowing current to flow from the source terminal to the drain terminal when the gate terminal’s voltage is reduced. When the gate terminal’s voltage is increased, current flow is blocked. As a result, the device works like a single, one-way valve on a circuit.
HERAF805G C0G is commonly used in applications requiring high-frequency performance and low-noise operation. The device is used in amplifiers and receiver circuits, as well as in television and radio receivers. The HERAF805G C0G is also used in telecommunications devices, such as digital telephone switches, modems, and digital signal processors. In addition, this device is often used in digital logic circuits, such as precision clock timing devices. The device is used in various other applications as well, including power supplies and switching systems.
In terms of its construction, the HERAF805G C0G consists of three layers. The first is the junction layer, which consists of n-channel material, and the second is the polysilicon gate layer, which is used to provide a signal voltage to the drain terminal. The final layer is the silicon substrate, which serves as a substrate for the other two layers and can also be used to provide a signal voltage to the gate terminal.
The HERAF805G C0G application field and working principle is fairly straight forward. The device functions as a single, one-way valve on a circuit, allowing current to flow from the source terminal to the drain terminal when the gate terminal’s voltage is reduced. However, when the gate terminal’s voltage is increased, current flow is blocked. This device is found in many electronic circuits and is used for a variety of purposes, from amplifying signals in radio receivers to precision clock timing in digital logic circuits. This device is also commonly used in telecommunications devices, such as digital telephone switches, modems, and digital signal processors.
The specific data is subject to PDF, and the above content is for reference
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