Allicdata Part #: | HERAF1006GC0G-ND |
Manufacturer Part#: |
HERAF1006G C0G |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 10A ITO220AC |
More Detail: | Diode Standard 600V 10A Through Hole ITO-220AC |
DataSheet: | HERAF1006G C0G Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.22061 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 80ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single
The HERAF1006G C0G Diode is a widely used single rectifier diode in the market. It is a glass-passivated junction diode in a DO-204AL case with thorough solder dip and leads for surface mounting. It features low forward voltage, high current capabilities, low leakage current, fast switching, shallow reverse leakage current and a low temperature coefficient of reverse voltage making it suitable for use in high-frequency, high surge and high-efficiency applications.
Application Fields of the HERAF1006G C0G Diode
The HERAF1006G C0G Diode can be used in a wide range of applications such as AC/DC rectification, battery charger circuits, voltage clamping, EMI/RFI filtering, and snubber circuits. It also finds use in power supplies and inverters, switches, current sensors, medical equipment, hazardous location circuits, RF amplifier applications, and automotive electrical systems.
Working Principle of the HERAF1006G C0G Diode
Diodes like the HERAF1006G C0G Rectifier Diode are two-terminal, semiconductor devices. Its two terminals are its anode and cathode connectors. The anode is the positive terminal and the cathode is the negative terminal. The anode current is formed by the flow of minority carriers which are negatively-charged electrons. The diode will let current flow from the anode to the cathode when a forward voltage is applied. If a reverse voltage is applied, the diode will not let any current flow from the cathode to the anode.
In the case of the HERAF1006G C0G Diode, a glass passivated junction provides improved performance and long term reliability. It also features an improved temperature coefficient of reverse voltage, meaning that its reverse voltage drops as temperatures increase. This PN junction diode also features a low forward voltage drop and low leakage current characteristics, as well as a fast reverse recovery time. These features enable it to perform well in high-frequency, high surge, and high-efficiency applications.
Conclusion
The HERAF1006G C0G Diode is a single rectifier diode that is widely used in a variety of applications. It provides excellent performance and long term reliability due to its glass-passivated junction, high surge capability, low forward voltage drop and reverse leakage current, and fast reverse recovery time. It is suitable for use in high-frequency, high surge, and high-efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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