Allicdata Part #: | HERAF801GC0G-ND |
Manufacturer Part#: |
HERAF801G C0G |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 8A ITO220AC |
More Detail: | Diode Standard 50V 8A Through Hole ITO-220AC |
DataSheet: | HERAF801G C0G Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.20143 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction to High Current HERAF801G C0G Application Field and Working Principle
The HERAF801G C0G is a high current diode which is typically used in automotive, power management and electrical engineering applications. It is a single diode which can operate at current levels of up to 40 amperes. With its superior thermal design and heat sink construction, the HERAF801G C0G provides superior performance, reliability and extended operational life.Overview of the HERAF801G C0G Single Diode
The HERAF801G C0G single diode is a high current power diode. It has an industrial grade package, which includes a 0.059" diameter lead-frame construction, a hermetically sealed conductive package, and a low-profile flat-top package with a total height of 0.175". The single diode is rated for peak reverse voltage of 800 volts, and for continuous reverse voltage of 600 volts. It also features a non-zero recovery rectifier with a maximum surge current of 200A and a repetitive peak rectifier current of up to 40A.Hermetic Package Design
The HERAF801G C0G single diode has a hermetically sealed conductive package. This package is designed to provide a high level of protection against moisture, dust, and other environmental factors which can cause damage to the device. It is also designed to provide superior thermal conductivity, which allows for improved reliability and extended product life.Features of the HERAF801G C0G Single Diode
The HERAF801G C0G single diode has many features which make it ideal for use in a range of electrical engineering applications. It has a low-profile flat-top package, which is designed to provide superior protection against physical shocks such as drops and vibrations. It also features a high surge capability, which ensures that it can withstand large electrical spikes.The HERAF801G C0G single diode has a very low leakage current, which helps to ensure a high degree of accuracy during device operation. The device is also designed to provide very low switching losses, which helps improve efficiency and reduce operating temperature.Typical Technologies
The HERAF801G C0G single diode is typically used in power management and electrical engineering applications involving high power systems. It is frequently used in applications where steady current must be provided for long periods of time. It is also used in automotive applications where it can be used to control charging currents, reverse polarity protection, and the control of power steering, alternator, and engine sensors.Working Principle
The HERAF801G C0G single diode is a non-zero recovery rectifier which operates on the principle of rectified current. When the diode is forward biased, current will flow from the anode to the cathode. This current is then rectified, meaning that only current in one direction is allowed to pass through the device. This rectified current is then used to provide steady power to the system.The HERAF801G C0G single diode is designed to work in a range of conditions. It can operate in temperatures ranging from -40C to 150C and is designed to have a reverse leakage current of less than 10 nA. In addition, it has a maximum repetitive reverse voltage of 600V, and a peak forward surge current rating of 200A.Conclusion
The HERAF801G C0G single diode is a high current diode which is typically used in automotive, power management and electrical engineering applications. It features a hermetic package, which provides superior protection against environmental contaminants. It also features a low profile flat-top package, which helps to improve the devices performance and reliability. Its non-zero recovery rectifier allows for steady current control, and the high surge capability makes the device suitable for use in a wide range of applications.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "HERA" Included word is 30
Part Number | Manufacturer | Price | Quantity | Description |
---|
HERAF808G C0G | Taiwan Semic... | 0.61 $ | 1854 | DIODE GEN PURP 1KV 8A ITO... |
HERA808G C0G | Taiwan Semic... | 0.83 $ | 550 | DIODE GEN PURP 8A TO220AC... |
HERA801G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
HERA802G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
HERA803G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
HERA804G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
HERA805G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
HERA806G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
HERA807G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 800V 8A TO... |
HERAF801G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 50V 8A ITO... |
HERAF802G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
HERAF803G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
HERAF804G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 300V 8A IT... |
HERAF805G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
HERAF806G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
HERAF807G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE GEN PURP 800V 8A IT... |
HERAF1001G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 50V 10A IT... |
HERAF1002G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 100V 10A I... |
HERAF1003G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 200V 10A I... |
HERAF1004G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 300V 10A I... |
HERAF1005G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 400V 10A I... |
HERAF1006G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 600V 10A I... |
HERAF1007G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 800V 10A I... |
HERAF1008G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE GEN PURP 10A ITO220... |
HERAF1601G C0G | Taiwan Semic... | 0.36 $ | 1000 | DIODE GEN PURP 50V 16A IT... |
HERAF1602G C0G | Taiwan Semic... | 0.36 $ | 1000 | DIODE GEN PURP 100V 16A I... |
HERAF1603G C0G | Taiwan Semic... | 0.36 $ | 1000 | DIODE GEN PURP 200V 16A I... |
HERAF1604G C0G | Taiwan Semic... | 0.36 $ | 1000 | DIODE GEN PURP 300V 16A I... |
HERAF1605G C0G | Taiwan Semic... | 0.36 $ | 1000 | DIODE GEN PURP 400V 16A I... |
HERAF1606G C0G | Taiwan Semic... | 0.92 $ | 1000 | DIODE GEN PURP 600V 16A I... |
Latest Products
IDW30E65D1
Diodes - General Purpose, Power, Switchi...
PMEG4005AEA/M5X
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
RGP10J-057M3/54
DIODE GEN PURPOSE DO-204ALDiode
1N4004-N-2-2-BP
DIODE GEN PURP 400V 1A DO41Diode Standar...
CPD76X-1N5817-CT
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
JANTXV1N6662US
DIODE GEN PURP 400V 500MA D5ADiode Stand...