Allicdata Part #: | HIP2100EIB-ND |
Manufacturer Part#: |
HIP2100EIB |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Intersil |
Short Description: | IC DRIVER HALF BRIDGE 8-SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC-EP |
DataSheet: | HIP2100EIB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Driven Configuration: | Half-Bridge |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | N-Channel MOSFET |
Voltage - Supply: | 9 V ~ 14 V |
Logic Voltage - VIL, VIH: | 4V, 7V |
Current - Peak Output (Source, Sink): | 2A, 2A |
Input Type: | Non-Inverting |
High Side Voltage - Max (Bootstrap): | 114V |
Rise / Fall Time (Typ): | 10ns, 10ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Supplier Device Package: | 8-SOIC-EP |
Base Part Number: | HIP2100 |
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Power Management ICs (PMICs) are increasingly important components used in a wide range of applications, including consumer electronics and telecom applications. The HIP2100EIB, part of the HIP2100 family of PMICs, is a high-efficiency, low-voltage driver specifically designed for controlling a variety of Power MOSFETs (PMFs). It is part of a host of Gate Drivers, PMICs that are responsible for controlling the voltage and current applied to the Gate of the MOSFET.
The HIP2100EIB is designed to provide an efficient and reliable low-voltage gate drive to enable fast turn-on and turn-off of the power MOSFET, which can enable higher switching frequencies compared to traditional low-voltage drivers. The gate driver features a 3.3 V output voltage, allowing for a wide range of operating voltages and performance levels. The driver also has an adjustable propagation delay, allowing for precise timing and compatibility with other components in the system.
The HI2100EIB is a high-efficiency, high-speed power MOSFET gate driver that is capable of sourcing and sinking up to 200 mA of current with an adjustable propagation delay of up to 300 microseconds. The driver uses an ultra-low quiescent current of less than 10 micro-amps and is ideal for use in low-voltage switching power supplies. The device is also capable of high-frequency PWM operation and is highly resilient to EMI, making it suitable for a wide range of industrial and consumer applications.
The HIP2100EIB also features a wide range of integrated safety features, including over-voltage protection, under-voltage protection, over-current protection, as well as variable thermal protection. In addition, the driver features a high-voltage electrostatic discharge protection to provide further protection against electrical shocks. The driver is also designed to meet various industry specific requirements, making it suitable for different applications.
The HIP2100EIB is a high-efficiency, low-voltage gate driver that is ideal for use in a wide range of power management applications. It provides an efficient and reliable low-voltage gate drive for fast turn-on and turn-off of the power MOSFET, as well as a wide range of integrated safety features for additional protection against electrical shocks and other potential hazards. Additionally, the driver features an adjustable propagation delay for precise timing. With its high-efficiency and integrated safety features, the HIP2100EIB is an ideal solution for a variety of power management applications.
The specific data is subject to PDF, and the above content is for reference
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