HIP2101IBZT

Current - Peak Output (Source, Sink):	2A, 2A
Base Part Number:	HIP2101
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	10ns, 10ns
High Side Voltage - Max (Bootstrap):	114V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2.2V
Voltage - Supply:	9 V ~ 14 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

PMIC (Power Management Integrated Circuit) Gate Drivers are advanced semiconductor devices that provide an interface between a controlling microprocessor or logic circuit and the gate of a power transistor. They are widely used in applications such as switch-mode power supplies, motor drives, and data converters. The HIP2101IBZT is a high-performance gate driver IC manufactured by Intersil Corporation. It is designed to drive power FETs and IGBTs in high-speed switching applications and is suitable for use in power, automotive and industrial applications.

Applications

The HIP2101IBZT is most commonly used in switch-mode power supplies (SMPS) and other high-speed switching applications such as motor drives, dc-dc converters and communications systems. It offers superior performance with low propagation delay, low quiescent current, high-speed over-current protection and enhanced PWM compatibility. It is also suitable for use in automotive and industrial applications.

Features and Benefits

The HIP2101IBZT offers a range of features and benefits that make it an ideal choice for a variety of power management applications. The main features of the HIP2101IBZT are as follows:• Low on-resistance —The device has a low on-resistance of 6-ohms, which allows for efficient power control.• High slew rate—The device has a high slew rate of 10 V/ns, which ensures fast switching speeds.• High current capacity— The device can handle peak currents up to 30A, allowing it to drive large power transistors.• Over-current protection— The device is equipped with a programmable over-current protection circuit which can be set to trigger at predetermined levels. This provides increased safety and system stability.• Internal voltage regulator— The device features an integrated voltage regulator which provides a stabilized voltage supply to the device and over-voltage protection.• Flexible control interfaces —The device features a wide range of digital control interfaces, allowing it to be easily integrated with a range of microprocessors and logic circuits.• Package—The device is available in a small SOIC-8 package, making it suitable for use in space-constrained applications.

Working Principle

The HIP2101IBZT is a high-speed gate driver IC, designed to drive power FETs and IGBTs. It works by providing the necessary control signal to the gate of a power transistor, allowing the transistor to be switched on and off quickly. The IC operates by simply applying a voltage to the "Gate" terminal of the device, which in turn controls the turn on and off of the transistor. When the voltage applied to the gate terminal is below the specified threshold, the transistor will remain off. When a voltage above the threshold level is applied to the gate terminal, a current is drawn from the "VIN" terminal, which turns on the transistor. This allows current to flow from the drain to the source, providing a low impedance path for the power provided to the device.When the voltage applied to the gate terminal is reduced below the threshold level, the current drawn from the VIN terminal is stopped and the transistor is switched off. By controlling the voltage applied to the gate terminal, the transistor can quickly be switched on and off, allowing the current provided to the device to be regulated efficiently.

Conclusion

In conclusion, the HIP2101IBZT is a high performance gate driver designed to provide an interface between a controlling microprocessor or logic circuit and power transistor gates. It offers superior performance with low propagation delay, low quiescent current, high-speed overcurrent protection and enhanced PWM compatibility. It is suitable for use in power, automotive and industrial applications. The device features a low on-resistance, high slew rate, and high current capacity, making it ideal for use in switch-mode power supplies and other high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description