| Allicdata Part #: | HIP2101IB-ND |
| Manufacturer Part#: |
HIP2101IB |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Intersil |
| Short Description: | IC DRIVER HALF-BRIDGE 8-SOIC |
| More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC |
| DataSheet: | HIP2101IB Datasheet/PDF |
| Quantity: | 1000 |
| Current - Peak Output (Source, Sink): | 2A, 2A |
| Base Part Number: | HIP2101 |
| Supplier Device Package: | 8-SOIC |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Rise / Fall Time (Typ): | 10ns, 10ns |
| High Side Voltage - Max (Bootstrap): | 114V |
| Input Type: | Non-Inverting |
| Series: | -- |
| Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
| Voltage - Supply: | 9 V ~ 14 V |
| Gate Type: | N-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Half-Bridge |
| Part Status: | Obsolete |
| Packaging: | Tube |
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.HIP2101IB is an intelligent, high-performance gate driver designed for high-side and low-side power MOSFETs and IGBTs. The HIP2101IB offers a high level of integration, providing all the features required for fast, reliable, and precise control of high-power MOSFETs and IGBTs.
HIP2101IB integrates either a single low-side FET or a high-side FET and low-side FET into a single integrated circuit. It offers superior performance with lower power dissipation and reduced complexity compared to discrete solutions. The on-board current-sense amplifier, over-temperature protection, and over-voltage protection allow designers to create reliable, safe systems with maximum protection. The HIP2101IB also features fast,configurable direct PWM gate drivers with adjustable gate drive current up to 2.6A.
The HIP2101IB can be used for a wide range of applications such as motor control, power supplies, AC/DC converters, LED backlighting, and automotive applications. The device can handle DC or AC voltages up to 100V. It also features internal anti-shoot-through protection, as well as over-current protection and a built-in over-voltage reset circuit. The device is available in a variety of packages to suit the needs of different applications.
The device has an internal adjustable deadtime from 0.1µs to 10µs. The deadtime is used to ensure that both the high-side and low-side switches are not switched on at the same time, allowing the MOSFET/IGBT to remain in the off state while being switched on. This feature helps prevent excessive power dissipation in the system.
The operational principle of the HIP2101IB is that the PWM signal is provided to the device through the PWM input pin. The user can select the switching polarity (high-side or low-side) through the MODE pin. If the signal is high, the low-side switch (M1) will be activated while the high-side switch (M2) is inactive. Conversely, if the signal is low, the high-side switch (M2) will be activated while the low-side switch (M1) is inactive.
The HIP2101IB also features an adjustable deadtime control circuit to ensure that both switches are not activated at the same time. The deadtime also prevents current flow in the wrong direction, as the switches will only be activated when the voltage across the switches is near zero. This feature further prevents power dissipation and reduces system losses by allowing the MOSFET/IGBT to remain off during periods of inactivity.
The HIP2101IB is an excellent device for a range of DC-DC applications, providing design flexibility and improved system reliability. The integrated features and protection circuits ensure that the system remains safe and reliable even in the most demanding applications. It also offers improved power efficiency and reduced complexity over discrete solutions.
The specific data is subject to PDF, and the above content is for reference
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HIP2101IB Datasheet/PDF