HIP2121FRTBZ-T

The HIP2121FRTBZ-T is a high-speed, low-overdrive, P-Channel MOSFET driver, which is meant to be used as a buffer amplifier between the controlunit and the MOSFET gate of power switch applications. Designed with a cost-efficient Double-Gate CMOS process, this device can drive large and small CMOS loads up to 20V. The HIP2121FRTBZ-T is particularly suitable for power switch circuits operating with low voltage devices and low switching frequency (up to 50kHz).

Assembly and Package

The HIP2121FRTBZ-T comes in a thermalpad package and has a flat top surface-mounted on a printed circuit board. The device’s structure contains two G fields and the die size is 5.2mm2. The flip chip is fastened by four bonding contacts. The power-contacting surface is specified to a width of 0.6 mm and a 0.4 mm edge for the active area and a 0.4mm for other areas. The maximum recommended soldering temperature is 250°C for 10 seconds.

Application Field and Working Principle

The primary application for the HIP2121FRTBZ-T is in power switching applications. It can be used to drive power MOSFETs and CMOS output stages in load switching circuits such as motor controllers, switching power converters, automotive fuel injection systems, and power electronic converters. The device is also commonly used in SMPS, DC-DC converters, and voltage regulators. The HIP2121FRTBZ-T can drive both an N-Channel and a P-Channel MOSFET and has been optimized to offer a low overdrive voltage, high frequency performance, and low gate capacitance. The device operates with a single power supply and utilizes a large gate-threshold voltage range to make it compatible with a wide range of devices.

The HIP2121FRTBZ-T is capable of switching up to 50 kHz and doing so with a reduced risk of latch-up. It does this by utilizing a DC split supply architecture. This means that the gate voltage must be below the Vcc supply when the load is off, but is capable of switching up to Vcc when the load is on. The device also uses a three-level quick-discharge feature which allows for a fast transition from high to low when the load is off.

The device is stable and reliable when used for MOSFET switching applications and does so without the need for additional driver components. The device is able to supply a low-level current as well as a higher current when switching heavy loads. With the integrated slew-rate control, the device can be adapted to optimize the HF response and ESD protection. The output of HIP2121FRTBZ-T has a ribbed structure to ensure a low inductance in order to deliver the best switching speed.

DXI Technology

The HIP2121FRTBZ-T also features a unique DXI (Double Gate Cross-Interlock) technology which integrated two MOSFET drive stages into a single device. This technology reduces the IC footprint and also reduces switching time as compared to a traditional driver IC. The DXI technology enhances the response time of the HIP2121FRTBZ-T and also offers a large input voltage range. The DXI technology also offers a low turn-off time which minimizes the output overshoot.

Conclusion

The HIP2121FRTBZ-T is a low-overdrive, high-speed, two-stage MOSFET driver that is capable of driving both N-Channel and P-Channel MOSFETs and CMOS loads up to 20V. The device is optimized for low switching frequency and low voltage applications and features an integrated three-level quick-discharge feature, slew-rate control and DXI technology. The device offers a low inductance output which results in high switching speed and low-level current, as well as a higher current when operating with heavy loads. Overall, this device is a highly stable and reliable choice for powering MOSFET switching power supply applications.