HIP2122FRTBZ

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Power semiconductor devices such as MOSFETs and IGBTs are widely employed in controlling power supplied to various systems and applications. With the continuous advancement of power semiconductor device technologies, more advanced devices with higher voltage, current and switching capabilities are being developed and are necessary for operation in more complex power systems.

Gate Drivers are designed to reduce the size and complexity of power switching circuits by directly controlling the shape, voltage, and current of the operating signal to the gate terminal of the power switching device. They provide isolation, protection and ease of design. Gate drivers are a critical component to the application.

One of the most advanced gate drivers commercially available is HIP2122FRTBZ, a two-channel, high-performance and high-reliability monolithic integrated circuit from Texas Instruments. This device is a low-side P-channel MOSFET, non-inverting driver that is capable of driving both N-channel and P-channel MOSFETs. It is capable of operating in both high and low side configurations and is suitable for a wide range of applications.

HIP2122FRTBZ offers many advantages over traditional gate driver designs. It has a wide input voltage range from 5V to 18V and has a 5MHz frequency rating. It also has an integrated charge pump circuit which enables it to tolerate large-signal and wide dynamic range operation. The device has dual-channel active-low outputs, and is able to drive both N-channel and P-channel MOSFETs in both high and low side configurations.

The HIP2122FRTBZ is an advanced device for applications requiring high efficiency, high reliability and low power dissipation. It provides protection against high voltage faults and thermal shutdown. Its low-side driver output is protected against short-circuit, over-current, or increased temperatures.

HIP2122FRTBZ gate driver is designed to work with any N-channel MOSFET, P-channel MOSFET, IGBTs and bipolar transistors. It is suitable for use in motor control and other applications where gate drivers are needed, such as UPS systems and industrial inverters. The device is also used in DC-DC converters, medical and industrial motor control, switching power supplies, HVAC systems and power supplies.

The working principle of the HIP2122FRTBZ is based on its ability to drive the power stage devices in two main stages. First, the device acts as a DC supply regulator, providing a regulated voltage to the power stage of the power device. Then, the driver circuit begins to raise the voltage at the device’s gate terminal and the device transitions into its conduction phase. Once the power stage device is switched, the HIP2122FRTBZ gate driver continues to provide a regulated voltage to the device’s gate, keeping it in the conducting state.

HIP2122FRTBZ is a highly reliable device for applications which require high efficiency and power dissipation. Its built-in charge pump circuit provides protection against high voltage faults and thermal shutdown. It is an ideal choice for motor control and other high-power applications. It provides an excellent solution for the design challenges encountered when using discrete components to control power stage devices.

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