HIP2100EIBZT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Driven Configuration:	Half-Bridge
Channel Type:	Independent
Number of Drivers:	2
Gate Type:	N-Channel MOSFET
Voltage - Supply:	9 V ~ 14 V
Logic Voltage - VIL, VIH:	4V, 7V
Current - Peak Output (Source, Sink):	2A, 2A
Input Type:	Non-Inverting
High Side Voltage - Max (Bootstrap):	114V
Rise / Fall Time (Typ):	10ns, 10ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package:	8-SOIC-EP
Base Part Number:	HIP2100

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HIP2100EIBZT Application Field and Working Principle

Introduction

HIP2100EIBZT is a powerful and intelligent gate driver. This state-of-the-art high performance IC is designed specifically for use in the power management, industrial and automotive applications. It is designed to drive N-Channel MOSFETs, POWER MOSFETs, and other power devices with high-side or low-side switches. HIP2100EIBZT provides an integrated solution for various gate driving applications and includes various features such as diagnostic feedback, fault protection, and short circuit detection.The HIP2100EIBZT is optimized to provide high-side drives for general-purpose applications up to 250V and low-side drives up to 600V. The HIP2100EIBZT is suitable for applications including motor control, power factor correction, inrush current control, lighting control, and energy storage systems.

Application Fields

The HIP2100EIBZT gate driver is designed to drive high voltage and high power switching devices such as N-channel MOSFETs and POWER MOSFETs. The gate driver provides better drive performance than traditional gate drives and significantly reduces switching losses in power switching applications. Furthermore, the integrated features such as fault reporting, short circuit detection, and overvoltage protection provide an added layer of protection to the system.HIP2100EIBZT gate drivers are commonly used in industrial and automotive applications such as motor control, power factor correction, inrush current control, lighting control, and energy storage systems. The high-side and low-side MOSFET switching provide added flexibility to the design. The gate driver can be used in any application requiring high-power switching, providing fast rise and fall times, and power dissipation.

Working Principle

The HIP2100EIBZT gate driver is designed to provide high-side and low-side drive capability. The gate driver incorporates both a high-side and a low-side driver, as well as an enable control input. The enable input controls whether the high-side or low-side driver is activated. The enable can be controlled by a wide range of signals, including Digital, Analog, and Pulse Modulated signals.The high-side and low-side drivers are configured to provide an output voltage that is adjusted through a potentiometer. The output voltage is then used to control the gate voltage of the MOSFET switch. The gate driver also features an output current limit setting, which sets the peak current limit of the output. This current limit is used to protect the MOSFET from being damaged due to overcurrent conditions.The HIP2100EIBZT gate driver also has an integrated diagnostic feedback which can be used to monitor the status of the device. The diagnostic feedback provides information such as temperature, voltage, current, and fault conditions. The diagnostic feedback can be used to detect any abnormal conditions such as overvoltage, overcurrent, or abnormal temperature.

Conclusion

HIP2100EIBZT gate driver is an advanced power management IC designed to provide high-side and low-side drives for general-purpose applications. It is optimized to provide high-efficiency drive performance, power dissipation, and integrated diagnostic feedback. The integrated features such as fault reporting, short circuit detection, and overvoltage protection provide an added layer of protection to the system. The HIP2100EIBZT gate driver can be used in motor control, power factor correction, inrush current control, lighting control, and energy storage applications.

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