HMC993LP5ETR RF/IF and RFID

The HMC993LP5ETR is a silicon-germanium (SiGe) monolithic microwave integrated circuit (MMIC) based RF misc. ICs and Modules. It provides a high level of small signal performance amplifying signals within the 55 MHz to 32 GHz range. This low noise amplifier is designed primarily for operation within the Ku-band satellite communication band. It’s configured as a three stage device with the first stage providing low noise gain, the second stage providing power amplification and the third stage providing linearization control for excellent distortion reduction.

The HMC993LP5ETR small signal amplifier is ideal for low noise applications like cellular base station receivers, low noise block down converters (LNB), satellite communications, WiMAX systems, point-to-point microwave links, radar systems and many more. With low noise figure, good gain and linearity performance, high isolation and low input/output return loss this IC is suitable for a wide range of applications involving amplification of low frequency and long distance RF signals.

The HMC993LP5ETR operates at a single supply voltage ranging from 7 to 15 V and provides a maximum gain of 18 dB. It also has an output power of 28 dBm and a power-added efficiency of 10.5%. The IC consumes a maximum current of 85 mA and features protector circuits for short and open as well as ESD protection. This amplifier also includes an 0.7dB noise figure and 16 dB of gain.

The working principle of the HMC993LP5ETR is relatively simple. The IC comprises a single stage operational amplifier with two transistors and general purpose feedback to control the chip gain. A bias voltage is applied to the chip to continue the signal amplification process. When the amplifier receives RF signals from the antenna, the amplifier will amplify the RF signals and enhance their power to drive the PA or other receiver circuits in the communication system.

This amplifier also provides temperature measurement capability as an additional feature. The temperature output port allows the PA temperature to be monitored by connecting a temperature sensing circuit. This allows the user to adjust the chip\'s bias voltage to ensure the optimum performance of the PA. It also helps to protect the IC from potential damage due to over temperature.

The HMC993LP5ETR boasts a wide variety of features and is an ideal choice for a comprehensive range of applications. It combines low noise gain with excellent linearity performance, high isolation, low input/output return loss and temperature monitoring. This makes it suitable for a range of low frequency and long distance RF applications.