HMC952LP5GE

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RF amplifiers are used to increase the power level of a radio signal, and HMC952LP5GE is a high-performance amplifier module used for a variety of applications. It has a gain of 15.6dB and a maximum input power of +13dBm. It is a GaAs pHEMT technology based amplifier and is housed in a lead-free 5x5mm surface-mount package. The amplifier operates over the frequency range of 800MHz to 2.7GHz and is suitable for both wireless infrastructure and mobile applications.

Although the HMC952LP5GE is widely used in a variety of applications, its most common use is for low noise amplification of an RF signal in the 1.7-2.7GHz range. It is often used in Wi-Fi and cellular infrastructure were high gain and low noise figure are required, and it is used in base stations, CDMA, GSM, EDGE, W-CDMA, TD-SCDMA, CDMA2000, WLAN, and LTE/WBAN standards.

The internal design of the HMC952LP5GE is based on a combination of on-chip active and passive components, which provide excellent linearity and high gain. The active components include an inter-stage power transistor, two field effect transistors (FETs), and a bias resistor network for biasing the FETs. The passive components include on-chip capacitor networks that set the amplifier’s frequency response. The amplifier also features a gate drive stage featuring a single-ended input configurable both as a supply voltage and as a gain control current.

The internal operation of the HMC952LP5GE is based on the principles of field effect transistors (FETs). In these devices, the gate voltage is responsible for controlling the electric field in the semiconductor material, and this, in turn governs the flow of electric current through the device. The on-chip resistor network provides an adjustable current source to control the FETs’ bias point, thereby controlling the amplifier’s gain. The internal capacitor networks provide the frequency response of the amplifier, and the gate drive stage controls the input power levels and the amplifier output.

In summary, the HMC952LP5GE is a high performance amplifier module, mainly used for applications requiring low noise amplification and high gain. Its internal design consists of on-chip active and passive components for linearity and high gain, as well as a gate drive stage for power control. Its operation is based on the principles of FETs and the on-chip resistor networks provide adjustable bias point control for gain control.

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