
Allicdata Part #: | 342-1078-ND |
Manufacturer Part#: |
HTNFET-D |
Price: | $ 312.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | |
Short Description: | MOSFET N-CH 55V 8-DIP |
More Detail: | N-Channel 55V 50W (Tj) Through Hole 8-CDIP-EP |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 283.64500 |
Vgs(th) (Max) @ Id: | 2.4V @ 100µA |
Package / Case: | 8-CDIP Exposed Pad |
Supplier Device Package: | 8-CDIP-EP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 225°C (TJ) |
Power Dissipation (Max): | 50W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 28V |
Vgs (Max): | 10V |
Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 5V |
Series: | HTMOS™ |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 100mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Field Effect Transistors (FETs) are electrical devices used in a variety of electronic applications to control the flow of electricity. Specifically, they are used to control the voltage or current by means of an electric field. One of the types of FETs is the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). A depletion-mode MOSFET is known as a High Threshold N-type MOSFET (HTNFET-D).
The applications and uses of HTNFET-D devices are widespread. They are used primarily in Audio-Video systems, such as televisions, radios and amplifiers, as voltage regulators and switches. They are also found in consumer electronics, such as computers and cell phones, where they are employed as amplifiers and oscillators. Additionally, HTNFET-Ds are employed for interfacing between analog and digital circuits in IT equipment, for signal amplification in imaging systems and for controlling power flow in power management and voltage regulators.
The basic operating principle of an HTNFET-D device is that it works on the basis of controlling current flow with a gate voltage. The gate voltage is applied to the control gate of the device, which in turn alters the electric field in the channel region between the source and the drain of the device. By adjusting the gate voltage, the device can control the current flow through the channel. This gate voltage can be either positive or negative, allowing the control of either n-type or p-type devices.
When the gate voltage is negative it will reduce the current flowing through the channel between the source and drain, thus controlling the “on” state. When the voltage is positive it will increase the current, thus controlling the “off” state. It is important to note that the gate voltage must be sufficiently high in order to turn the device on or off. If the voltage is too low, the device will stay in a quiescent or “sleep” state.
HTNFET-Ds are also used in high-frequency applications, where they are used to control the frequency or oscillation of a signal. This type of application requires the device to be extremely fast in its response time—a feature that HTNFET-Ds provide very well. Additionally, they can withstand higher temperatures than many other types of FETs, making them an ideal choice for applications that require high-temperature tolerance.
In general, HTNFET-Ds are reliable, efficient, and capable devices that are used in a variety of applications. By controlling voltage and current, they are used to switch and regulate both analog and digital signals. They are also extremely fast, making them perfect for high-frequency applications. With their capability to withstand high temperatures, they are an often specified choice for any application that demands reliability and performance.
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