HTNFET-TC

Vgs(th) (Max) @ Id:	2.4V @ 100µA
Package / Case:	--
Supplier Device Package:	--
Mounting Type:	Through Hole
Operating Temperature:	--
Power Dissipation (Max):	50W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	290pF @ 28V
Vgs (Max):	10V
Gate Charge (Qg) (Max) @ Vgs:	4.3nC @ 5V
Series:	HTMOS™
Rds On (Max) @ Id, Vgs:	400 mOhm @ 100mA, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Bulk

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The Applications of High-Temperature Nitride Field Effect Transistors (HTNFET-TC)

High-Temperature Nitride Field Effect Transistors (HTNFET-TC) are an advanced form of field effect transistors (FETs) designed to operate in high-temperature and harsh environmental conditions. They are suitable for applications in high-temperature and harsh environments such as industry, oil and gas exploration, medical, aerospace, and military. In this article, we will discuss the applications and working principle of HTNFET-TC.

What Are HTNFET-TCs?

HTNFET-TCs are a type of Heterostructure FETs, which are highly miniaturized, ultralow power transistors with wide temperature ranges. They are formed by depositing high-temperature nitride material such as silicon nitride (Si3N4) and titanium nitride (TiN) onto a range of substrates such as silicon, gallium arsenide, gallium phosphide, and indium phosphide. This results in a heterostructure between a layer of material and the substrate. The material used in the layer determines the type of transistor, and the process by which the hetero structure is formed determines the characteristics and performance of the transistor.HTNFET-TCs are highly temperature resistant and can operate at temperatures of up to 600°C. They offer very high frequency performance and can be used for high-speed and high-temperature applications. They also possess a high current driving capacity, high transconductance and low power operation.

Applications of HTNFET-TCs

HTNFET-TCs are widely used in a variety of applications due to their excellent thermal, electrical and mechanical properties. They are well-suited to applications operating in extreme temperature conditions, such as temperature-sensitive semiconductor systems, power electronics, automotive, aerospace and military systems, as well as medical applications. These transistors are also used in systems that require stability over a wide temperature range, such as communication systems, industrial automation, renewable energy systems and industry-specific equipment. They are also well suited for aerospace and military systems, which require higher performance and stability than what is typically available in other FETs.

Working Principle of HTNFET-TCS

The working principle of HTNFET-TCs is based on the same principles as other FETs, but with a few important differences. Unlike traditional FETs, which are made up of doped or undoped semiconductors, HTNFET-TCs are made up of ultra-low-power transistors with the addition of a high-temperature nitride layer. This layer acts as a sacrificial layer between the bottom (source) and top (drain) terminals, resulting in a field effect between the two terminals.When a potential is applied to one of the terminals, the electric field created at the nitride layer will cause a current to flow between the source and the drain. The direction of the current flow is determined by the type of nitride material used, which can be either n-type or p-type. The type of nitride material used will also determine the performance characteristics of the transistor (e.g. current gain, power efficiency, etc.).

Conclusion

High-Temperature Nitride Field Effect Transistors (HTNFET-TCs) are a type of highly miniaturized and ultralow-power transistor designed to operate in extreme temperature conditions, such as high-temperature and harsh environmental conditions. They offer excellent thermal, electrical and mechanical properties and can be used for a variety of applications, such as temperature-sensitive semiconductor systems, power electronics, automotive, aerospace and military systems, as well as medical applications. The working principle of HTNFET-TCs is based on the same principles as other FETs, with the addition of a high-temperature nitride layer. This layer enables the transistor to effectively control the current flow and determine its performance characteristics.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description