IAUT165N08S5N029ATMA2 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3.8V @ 108µA
Package / Case:	8-PowerSFN
Supplier Device Package:	PG-HSOF-8-1
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	167W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6370pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	90nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	2.9 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	165A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IAUT165N08S5N029ATMA2 Application Field and Working Principle

IAUT165N08S5N029ATMA2, often referred to as a “power MOSFET,” is a type of transistor often used in high-power applications such as motor control, audio amplifiers, and high-voltage switching circuits. MOSFETs are often used in these applications because they offer high power efficiency and low on-state resistance, while also having diode-like characteristics such as fast switching action and high input impedance.The IAUT165N08S5N029ATMA2 has a P-channel MOSFET structure, meaning it is composed of a semiconductor material in which a positive charge can be stored, or “channeled.” The gate of the MOSFET is usually connected to the positive rail of a power supply, and a voltage applied to the gate voltage allows current to flow through the body region, or “channel.” This voltage level must be kept within certain limits or the device may fail.The IAUT165N08S5N029ATMA2 offers low on-state resistance and low gate charge, which makes it suitable for applications were rapid switching is needed. The device also offers a wide power handling range, which is ideal for high-power applications. A key feature of the IAUT165N08S5N029ATMA2 is its excellent thermal stability—it can handle high temperatures without degrading in performance.The IAUT165N08S5N029ATMA2 is typically applied in applications requiring high current such as motor control, power supplies, and audio amplifiers. It can also be used in high-voltage switching circuits, where its low on-state resistance and fast switching times make it ideal for controlling large amounts of current in a short time.The working principle of the IAUT165N08S5N029ATMA2 is relatively simple. When a voltage is applied to the gate of the device, the positive charge stored in the semiconductor material is expelled from the body region, or "channel", allowing current to flow between the source and drain pins. The gate voltage must be kept within certain limits or the device may fail.The IAUT165N08S5N029ATMA2 offer excellent performance when used in conjunction with other components in power switching applications. By combining the device with transistors and other electrical components, an efficient and reliable power switching circuit can be constructed, able to efficiently manage higher voltages and currents than traditional components used in power switch designs.Overall, the IAUT165N08S5N029ATMA2 is an ideal device for applications which require high current or fast switching times. Its excellent thermal stability and relatively low on-state resistance make it a reliable choice for high-voltage switching circuits. The device also offers excellent performance when used in conjunction with other components to create efficient power switching circuits.

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