IAUT240N08S5N019ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IAUT240N08S5N019ATMA1TR-ND |
Manufacturer Part#: |
IAUT240N08S5N019ATMA1 |
Price: | $ 1.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 8HSOF |
More Detail: | N-Channel 80V 240A (Tc) 230W (Tc) Surface Mount PG... |
DataSheet: | IAUT240N08S5N019ATMA1 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 1.46061 |
Vgs(th) (Max) @ Id: | 3.8V @ 160µA |
Package / Case: | 8-PowerSFN |
Supplier Device Package: | PG-HSOF-8-1 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9264pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | OptiMOS™-5 |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 240A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IAUT240N08S5N019ATMA1 is a single MOSFET transistor, which is employed in various applications. It can be used to control the on/off current of a circuit, as well as providing protection against short circuiting and possible over-current conditions. The IAUT240N08S5N019ATMA1 is ideal for applications such as motors, transformers, voltage regulators, and converters. In addition, the IAUT240N08S5N019ATMA1 can be used in high-power switching and linear applications.
A MOSFET is a type of field-effect transistor (FET) that is operated by applying voltage to one or more of its terminals. The IAUT240N08S5N019ATMA1 operates in the enhancement mode, meaning that an electric charge is applied to an area of the gate (the terminal to which the voltage is applied), allowing for current to flow from the source to the drain, without the application of any additional current. This makes the MOSFET an efficient, low-power device and allows for easier control of the circuit by merely adjusting the voltage.
Operating the IAUT240N08S5N019ATMA1 is relatively straightforward, as the gate voltage controls the current flow through the transistor. The input voltage applied to the gate is the determining factor for how much current will flow through the MOSFET. A high gate voltage will increase the current flow, while a low gate voltage will reduce the current flow. As a result, this type of transistor is often used in applications that require precise current control, such as power supplies, and can be used with either AC or DC power.
The IAUT240N08S5N019ATMA1 has an extremely low on-state resistance, which is the resistance experienced when the transistor has been switched on. This low on-state resistance allows for higher switching speeds, better power efficiency and improved electro-magnetic interference (EMI) performance. Additionally, the IAUT240N08S5N019ATMA1 has a high breakdown voltage and can handle a large amount of current, thus making it suitable for high-power switching applications. Furthermore, the IAUT240N08S5N019ATMA1 features a compact size, making it suitable for applications where space conservation is important.
The IAUT240N08S5N019ATMA1 is a highly reliable device and is designed to handle a wide range of voltages, as well as high temperatures. Additionally, the MOSFET transistor has been designed to meet the standards set by the Underwriters Laboratories (UL) and is RoHS compliant. This ensures that the device is safe for operation, and that it is environmentally friendly.
In summary, the IAUT240N08S5N019ATMA1 is a single MOSFET transistor that is used in a wide variety of applications. It can be used to control the current flow within a circuit, and is suitable for both linear and high-power switching applications. The IAUT240N08S5N019ATMA1 has a low on-state resistance, a high breakdown voltage, and is designed to meet the standards set by the Underwriters Laboratories. This makes the transistor a reliable and efficient device, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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