ICTE12-E3/73 Allicdata Electronics
Allicdata Part #:

ICTE12-E3/73-ND

Manufacturer Part#:

ICTE12-E3/73

Price: $ 0.20
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 12V 16.5V 1.5KE
More Detail: N/A
DataSheet: ICTE12-E3/73 datasheetICTE12-E3/73 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2000 +: $ 0.18225
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Current - Peak Pulse (10/1000µs): 70A
Base Part Number: ICTE*
Supplier Device Package: 1.5KE
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: TransZorb®
Voltage - Clamping (Max) @ Ipp: 16.5V
Voltage - Breakdown (Min): 14.1V
Voltage - Reverse Standoff (Typ): 12V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Box (TB) 
Description

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TVS - Diodes are a kind of highly advanced surge protection diode that is capable of handling faster rising pulse voltage and higher peak current in various electronic systems. The ICTE12-E3/73 is a type of TVS-Diode with an application field that mainly focuses on ESD protection for automotive systems, industrial control systems, telecommunications, and data networks. It also has a fast response time and is highly reliable, making it the ideal choice of protection for many applications.

The ICTE12-E3/73 is a thyristor device with a highly advanced reverse repetitive transient voltage suppression (TVS) diode. It is designed using a p-i-n silicon structure that is capable of handling high pulse voltage and high peak current. It has excellent protection performances and features the expanded shunt region which prevents back-surface charge characteristic. The ICTE12-E3/73 protects against electrostatic discharge, lightning strikes, and various other transients. It also has a high surge capability and a low capacitance of 35pF.

The working principle of the ICTE12-E3/73 is based on the avalanche breakdown which occurs when the applied voltage reaches a certain breakdown voltage. When electric current passes through the device, it generates heat that eventually leads to the avalanche breakdown of the semiconductor material. This breakdown results in the production of electrons, and these electrons further enhance the current. This enhances the speed of the switching action of the diode to ensure that the device can support high-speed current applications.

The ICTE12-E3/73 is a highly advanced surge protection diode with excellent protection performance and fast response time. It is highly reliable and provides a comprehensive protection against ESD, lightning strikes and other transients. It is suitable for a wide range of applications which include automotive systems, industrial control systems, telecommunications, and data networks. The working principle of this diode is based on the avalanche breakdown, which is triggered by a certain voltage threshold. The avalanche breakdown produces electrons that further enhance the current, resulting in a higher speed of the switching action. The ICTE12-E3/73 is a valuable tool for protecting against power surges and transients in modern electronic systems.

The specific data is subject to PDF, and the above content is for reference

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