IDT6116LA25SO Allicdata Electronics
Allicdata Part #:

IDT6116LA25SO-ND

Manufacturer Part#:

IDT6116LA25SO

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 24SOIC
More Detail: SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parall...
DataSheet: IDT6116LA25SO datasheetIDT6116LA25SO Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC
Base Part Number: IDT6116
Description

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The IDT6116LA25SO is a memory device that is commonly used today in a myriad of applications. It is a 64K x 16-bit asynchronous dynamic random access memory (EDRAM) die, with a small package size of just 11 by 11 millimeters. For such a small form factor, the device has a high speed, low power consumption, and good endurance.

The device is identified by its two distinct applications, one being the mobile phone memory, and the other being standby memory used in gaming consoles and PC systems. With its low power consumption, the device allows for increased usage time for mobile phones and for PCs to be powered up for longer periods.

The working principle of the device is simple. It uses a dynamic random-access memory (DRAM) technology to store information in a volatile memory state. This means that the data stored in the device is erased when no power is applied to it, and new data can be written and retrieved from it whenever necessary.

The device\'s EDDRAM technology also allows it to access data more quickly, as each of its cells has two bits per column, opposed to the single bit per column found in conventional DRAMs. This makes the IDT6116LA25SO capable of much higher data transfer rates, up to 16 megabytes per second.

The device also has an enhanced built-in error correcting code (ECC), which prevents data corruption and helps to maintain a high level of stable memory. It is also built with fast burst transfer timing capability, allowing it to access data more quickly when multiple commands are issued consecutively. This enables more efficient data storage, as the device can store and access data quickly with fewer commands.

Finally, the device has a temperature range of 0°C to +85°C and a single supply voltage of 3.3V, making it a good choice for applications where low power consumption and temperature regulation are important.

The IDT6116LA25SO is a versatile memory device and can be found in a variety of applications, from mobile phones and gaming consoles, to PCs and industrial and medical equipment. It is a reliable, low power memory solution and its small form factor makes it an ideal choice for applications that require a high speed, reliable memory with efficient power consumption.

The specific data is subject to PDF, and the above content is for reference

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