IDT6116SA20SO Allicdata Electronics
Allicdata Part #:

IDT6116SA20SO-ND

Manufacturer Part#:

IDT6116SA20SO

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 24SOIC
More Detail: SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parall...
DataSheet: IDT6116SA20SO datasheetIDT6116SA20SO Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC
Base Part Number: IDT6116
Description

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The IDT6116SA20SO memory is a high-performance SRAM (Static Random Access Memory) that offers unprecedented on-chip performance and support for high-speed data transactions. With high current access times and wide inputs and outputs, the IDT6116SA20SO memory is an ideal solution for applications requiring high-bandwidth, low latency, and high-performance.

Application Field

The IDT6116SA20SO memory is designed for high-bandwidth and low-latency data transactions and suits a wide range of applications that require high-performance memory. This memory is particularly popular in embedded applications, such as industrial automation, robotics, and medical imaging. Additionally, its low power requirements enable it to be used in battery powered devices without compromising performance. Other popular application areas include telecommunications, military, and aerospace.

The IDT6116SA20SO memory\'s high reliability and consistent performance also make it ideal for use in mission-critical applications, such as automotive safety systems and industrial process control. Its wide voltage range and small form factor make it suitable for use in small spaces and constrained environments.

Working Principle

The IDT6116SA20SO memory uses SRAM technology to store and retrieve data, which makes it highly reliable and efficient. This technology works by storing data in an array of individual cells, each of which consists of a flip-flop circuit. The data is stored as bits, which can be read, written to, or deleted from each cell. The memory access speed is determined by the number and type of components used in the circuit, and write operations last longer than read operations. Additionally, the IDT6116SA20SO memory can handle full address and data bus widths of up to 16 bits, which is important for applications that require the manipulation of large amounts of data.

The IDT6116SA20SO memory has a fast access time of 20 nanoseconds. This allows it to rapidly access stored data and ensures that operations are performed efficiently and without delay. Additionally, it has a low power consumption and a wide operating voltage range, making it suitable for use in battery powered applications. The IDT6116SA20SO memory also has a wide temperature range, allowing it to be used in extreme environments. Finally, it has additional features such as a built-in voltage regulator and a built-in watchdog timer.

The IDT6116SA20SO memory is an ideal choice for applications requiring high-bandwidth, low latency, and high-performance. Its wide input and output range, low power requirements, and high speed make it suitable for a wide range of applications. Its robust design and unique features such as the built-in voltage regulator and watchdog timer make it highly reliable and suitable for mission-critical applications, such as automotive safety systems. Finally, its small form factor and wide temperature range make it suitable for use in constrained environments.

The specific data is subject to PDF, and the above content is for reference

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