IDT6116LA45SOG8 Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	16Kb (2K x 8)
Write Cycle Time - Word, Page:	45ns
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-SOIC (0.295", 7.50mm Width)
Supplier Device Package:	24-SOIC
Base Part Number:	IDT6116

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Introduction

IDT6116LA45SOG8 is a DRAM-based dynamic random access memory (DRAM), and is ideal for high speed data storage and retrieval applications. Due to the high speed memory access, the IDT6116LA45SOG8 can be used in a number of different applications, including embedded systems, high speed computing applications, and enterprise storage. The IDT6116LA45SOG8 offers performance, versatility, and cost-effectiveness, making it an ideal solution for many applications.

Memory

Application Field

The IDT6116LA45SOG8 DRAM is designed to provide high speed access to data stored in memory, making it well-suited for memory intensive applications. It can be used in a wide range of embedded systems, high speed computing applications, and enterprise storage. Some of the most common applications include:

• Embedded Systems
• High Performance Computing (HPC)
• Storage Systems
• Real-time Analytics
• Real-time Systems

Due to its high speed access, the IDT6116LA45SOG8 is also widely used in gaming consoles, computer servers, PC graphics cards, and other high performance applications.

Working Principle

The IDT6116LA45SOG8 DRAM is based on the DRAM (Dynamic Random Access Memory) standard. DRAM is a type of volatile memory, which means that the data in the memory is lost when the power is turned off. The IDT6116LA45SOG8 memory operates by storing DRAM cells in an array, which are composed of small capacitors and transistors. When the capacitor has a charge it will store a one in the cell and when the capacitor has no charge it will store a zero.The IDT6116LA45SOG8 memory operates by reading and writing data to and from the cells in the array. The memory controller is responsible for managing the data read and write requests, scheduling when the data is read or written, and ensuring data integrity. The memory controller also performs functions such as burst mode, auto-refresh, and error correction.The IDT6116LA45SOG8 memory is designed to offer maximum performance without sacrificing power efficiency. It supports multiple burst modes, allowing the memory to transfer data at high speeds, and is power efficient, meaning it can handle large amounts of data without draining too much energy.

Conclusion

The IDT6116LA45SOG8 DRAM is ideal for high speed memory access applications. It can be used in embedded systems, high performance computing, storage systems, gaming consoles, and other high performance applications. The IDT6116LA45SOG8 memory operates by reading and writing data to and from cells in an array and takes advantage of burst modes for maximum performance. It also offers power efficiency, meaning it can handle large amounts of data without draining too much energy.

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