IDT6116SA45SOI8 Allicdata Electronics
Allicdata Part #:

IDT6116SA45SOI8-ND

Manufacturer Part#:

IDT6116SA45SOI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 24SOIC
More Detail: SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parall...
DataSheet: IDT6116SA45SOI8 datasheetIDT6116SA45SOI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC
Base Part Number: IDT6116
Description

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The IDT6116SA45SOI8 is a synchronous high-speed static random access memory (SRAM). It offers increased output drive, fast read access time, low power consumption and a variety of output configurations. SRAM is a type of memory technology used in computing and communication applications that requires fast, efficient and reliable access to data and information.

The IDT6116SA45SOI8 is made with a 0.45µm CMOS technology, which provides high performance and low power consumption. It is designed to operate up to a maximum frequency of 83MHz and offer a fast access time of issue of 5ns. It also offers a wide operating range of 1.8V to 5V and is offered in 44-pin thin small-outline package. The device is rated for operation up to 125°C, which allows it to work in extreme conditions.

This device is suitable for applications such as digital signal processing (DSP) systems, portable electronics, video graphics, memory expansion, video gaming and microcontroller applications. It can be used in both commercial and industrial applications. The device also features an internal high-performance fast write protected register and multiple proprietary features which make it suitable for many different applications.

The IDT6116SA45SOI8 uses a synchronous burst architecture to read data from the internal SRAM array. It can be used for single-cycle and multi-cycle burst reads and writes. The device also features a read-modify-write sequence and multi-write support, which allows it to be used for high-speed data transfer. The device features a powerful address counter, which can be used to support multiple reads and writes in a single cycle.

The device also features an internal voltage regulator, which provides the low voltage operation necessary for portable systems and digital signal processing applications. The device supports a wide range of output signals, allowing it to be used in a variety of applications. The device has a complete range of programmable features, which can be used to optimize the performance of the device and make it suitable for various application needs.

In conclusion, the IDT6116SA45SOI8 is an ideal choice for applications that require high performance and flexibility. Its fast access time and low-power operation make it perfect for power management applications. Its wide range of output signals and multiple proprietary features make it a great solution for a variety of applications. The device’s wide range of programmable features make it suitable for both commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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