IDT6116SA35SOI8 Allicdata Electronics
Allicdata Part #:

IDT6116SA35SOI8-ND

Manufacturer Part#:

IDT6116SA35SOI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 24SOIC
More Detail: SRAM - Asynchronous Memory IC 16Kb (2K x 8) Parall...
DataSheet: IDT6116SA35SOI8 datasheetIDT6116SA35SOI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC
Base Part Number: IDT6116
Description

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The IDT6116SA35SOI8 is a 16K x 8-bit static RAM designed to provide high speed and performance in a range of applications, including embedded systems, personal computers and automotive systems. The device is designed to operate at 3.3V with a read or write time as low as 10ns, making it ideal for applications which require a fast response time. Its small form factor allows it to fit into tight spaces and its low power requirements make it suitable for battery powered devices.

Application field

The IDT6116SA35SOI8 can be used in various applications where fast access to data is required, such as embedded systems and medical imaging. In addition, the device can also be used in automotive systems, as it is ideal for power efficiency and operation in a wide temperature range. It can also be used in portable devices and home entertainment systems, where space and power consumption are important factors.

Working principle

The IDT6116SA35SOI8 is a static random-access memory (SRAM) device, which means that it stores data in the form of data bits stored in individual cells. Each cell is made up of four transistors and a storage unit, which is capable of storing one bit. The transistors control the flow of current to the storage unit, and the logic signals connected to the transistors are used to determine whether the bit stored in the cell is a 1 or a 0. When data is written to the SRAM, the logic signals are used to control the transistors and thus control the flow of current, changing the stored bit.

To access data stored in the cell, the control signals are used to enable the transistor connected to the storage unit, allowing the current to flow and the stored data to be read. The read time is fast as the data is already stored in the cell, and the logic signals simply control the transistor. The write time, however, is slightly slower as the logic signals must be used to control the current to change the data bit stored in the cell.

The IDT6116SA35SOI8 is a fast and efficient SRAM device, and is ideal for applications which require fast access times and low power consumption. The device is versatile and easy to use, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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