IDT6116LA25SO8

Memory is an important resource in the ever-evolving fields of information technology and communication. The IDT6116LA25SO8, manufactured by Integrated Device Technology, is a single-channel dynamic random access memory (DRAM) designed for use in high-performance applications. This article explains the application field and working principle of the IDT6116LA25SO8.

Application Field

The IDT6116LA25SO8 is a high-density, low-power DRAM with a high-performance architecture. It is encoded as a 2.5V SDRAM device, and is ideal for applications such as networking and embedded system-on-chip (SoC) implementations where low power and high performance are paramount. It has a capacity of 256Mbits, and it is available in both 64Mx32 and128Mx32 configurations. It has an industry-standard pin design, making it compatible with a variety of existing designs.

Working Principle

The IDT6116LA25SO8 utilizes a fast synchronous DRAM architecture which enables high velocity throughput and improved system performance. Incoming signals are clocked into the device where they are processed and stored. Data is written to the device at the rising edge of each clock cycle, and retrieved at the falling edge of each cycle. The IDT6116LA25SO8 also utilizes an integrated buffer which reduces external components, simplifies the traces, and improves system performance. In addition, it supports burst-of-four and burst-of-eight read and write operations, which further optimize system performance.

Conclusion

The IDT6116LA25SO8 is a high-density, low-power DRAM device which is ideal for high-performance applications. It has an integrated buffer which reduces external components and simplifies the traces, and features fast synchronous DRAM architecture enabling high velocity throughput and improved system performance. It supports burst-of-four and burst-of-eight read and write functions, further optimizing system performance. It is an ideal solution for embedded SoC implementations or any other application requiring high performance and low power.