IDT6116LA45SOI8

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a major component of most computer systems. It is used to store data, programs and instructions for use by the computer processor. There are many types of memory, each with different characteristics and applications. One of the more popular types of memory is the IDT6116LA45SOI8. This memory device is a synchronous, high-performance, low-power Static Random Access Memory (SRAM) with 1.875 Mbps data transfer rate and 3.075 Mbps access/read/write capability. In this article, we’ll discuss the application field and working principle of the IDT6116LA45SOI8, a type of Static Random Access Memory (SRAM).

Application Field of IDT6116LA45SOI8

The IDT6116LA45SOI8 is designed for applications in data caches and high-speed memory buffers. This type of memory is often used as a level-two (L2) cache and as a data cache in computer systems. It is also used in graphics accelerators, image processors, communication chips, and digital signal processing (DSP) devices. Due to its low-power consumption, the IDT6116LA45SOI8 is also suitable for battery-powered and portable applications.

The IDT6116LA45SOI8 is a 256K x 16 device that offers 256K words of user-selectable memory. It is packaged in an 8-pin SOIC (Small Outline Integrated Circuit), making it an ideal choice for space-constrained and highly integrated applications. The device offers a 1.875 Mbps single-data rate or 3.075 Mbps double-data rate data transfer rate. It also has a power-saving auto power down feature that saves power when the device is in standby mode.

Working Principle of IDT6116LA45SOI8

The IDT6116LA45SOI8 is a synchronous SRAM. This means that read and write operations are synchronized with a clock signal. The IDT6116LA45SOI8 contains two separate cells. Each cell consists of two transistors, one for storing data and the other for reading data. The device has access/read/write times of 10, 15 and 20 ns, respectively.

The IDT6116LA45SOI8 is designed to meet the stringent performance needs of various applications. It has low power dissipation, no read/write contention and lower latencies than other SRAMs. The IDT6116LA45SOI8 also features a write protect feature that allows users to disable the write operations. This is useful when the device needs to be maintained in a specific state.

The IDT6116LA45SOI8 also provides additional features such as data masking, CRC (Cyclic Redundancy Code) and error correction capability. These additional features enhance the performance and reliability of the device. It also offers ECC (Error Correcting Code) protection for data integrity.

Conclusion

The IDT6116LA45SOI8 is a synchronous, high-performance, low-power Static Random Access Memory (SRAM) with 1.875 Mbps data transfer rate and 3.075 Mbps access/read/write capability. It is designed for use in applications such as data caches, high-speed memory buffers, graphics accelerators, image processors, communication chips, and digital signal processing (DSP) devices. The device has features such as data masking, write protect, CRC and ECC protection, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference