Allicdata Part #: | IPA100N08N3GXKSA1-ND |
Manufacturer Part#: |
IPA100N08N3GXKSA1 |
Price: | $ 0.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 40A TO220-3 |
More Detail: | N-Channel 80V 40A (Tc) 35W (Tc) Through Hole PG-TO... |
DataSheet: | IPA100N08N3GXKSA1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 0.73233 |
Vgs(th) (Max) @ Id: | 3.5V @ 46µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO220-FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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In today’s world, transistors play a key role in the field of electronics, and are used for a variety of applications such as signal processing, automation, and embedded systems. The most commonly used type of transistor is the field-effect transistor, or FET. A type of FET known as the metal–oxide–semiconductor field-effect transistor (MOSFET) is particularly popular because it has several advantages over other transistor types, such as low power consumption, high input impedance, and small size. One type of MOSFET is the single junction IPFET, which is designed for use in power electronics applications.
The single junction IPFET, also known by its part number IPA100N08N3GXKSA1, is a N-channel junction isolated polysilicon field-effect transistor. It is a vertical FET structure that is composed of a drain, a drain-source overlap region, a gate contact region, a source contact region, and a polysilicon gate. It is designed to be used in voltage and current controlled applications, such as power inverter circuits, AC-DC converters, switching power supplies, motor drives, and welding power supplies. The junction isolation technology offers improved gate-source capacitance performance, which is beneficial in applications where high-speed switching is required.
The working principle of the IPFET is based on the flow of electric current through it. The current is controlled by a gate voltage, which is generated by a specific external circuit. As the gate voltage is raised, the current between the drain and source terminals increases, and vice versa. This type of FET also has a high input impedance, which means that it does not draw significant current from the input source when the gate voltage is applied. The IPFET is a symmetric device, meaning that its characteristics are identical in both directions of the output current.
The IPA100N08N3GXKSA1 has a number of desirable characteristics, such as low on-resistance, fast switching times, and low power consumption. It also has excellent thermal management properties, with a maximum junction temperature of 150°C, which allows it to be used in applications where high heat dissipation is an issue. It has an operating temperature range of -40°C to +150°C, and an operating voltage of 250V.
The IPA100N08N3GXKSA1 is an excellent choice for high performance applications. It can be used in a variety of power electronics and computer applications, such as power supplies, inverters, and motor control circuits. Its low power consumption and fast switching times make it ideal for use in power management and control circuits. In addition, its excellent thermal management properties make it a suitable choice for applications that require intensive heat dissipation.
The specific data is subject to PDF, and the above content is for reference
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